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參數(shù)資料
| 型號： | TDA8580J |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Multi-purpose power amplifier |
| 中文描述： | 多用途功率放大器 |
| 文件頁數(shù)： | 7/28頁 |
| 文件大小： | 181K |
| 代理商： | TDA8580J |
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2000 Apr 18
7
Philips Semiconductors
Preliminary specification
Multi-purpose power amplifier
TDA8580J
CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25
°
C; f
i
= 1 kHz; R
L
=
∞
; measured in test circuit of Fig.28; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
I
q(tot)
I
stb
V
O
V
P(mute)
V
I
Control pins
operating supply voltage
total quiescent current
standby current
DC output voltage
low supply voltage mute
DC input voltage
8.0
6.0
14.4
140
1
7.0
7.0
4.0
24
170
50
8.0
V
mA
μ
A
V
V
V
S
TANDBY PIN
(see Table 1)
V
5(stb)
voltage at STANDBY pin for standby
condition
hysteresis voltage at STANDBY pin
for standby condition
voltage at STANDBY pin for mute
condition
voltage at STANDBY pin for on
condition
0
0.8
V
V
hys(5)(stb)
note 1
0.2
V
V
5(mute)
V
13
< 0.8 V
2.0
5.3
V
V
5(on)
V
P
> 9 V; note 2
8.0
18
V
M
UTE PIN
(see Table 1)
V
13(mute)
voltage at MUTE pin for mute
condition
voltage at MUTE pin for on condition V
5
= 5 V
Diagnostic; output buffer (open-collector);
see Figs 3, 4 and 5
V
5
= 5 V
0
0.8
V
V
13(on)
2.5
5.3
V
V
OL
I
LI
CD
T
j(diag)
LOW-level output voltage
leakage current
clip detector
junction temperature for high
temperature warning
I
sink
= 1 mA
V
DIAG
= 14.4 V
V
DIAG
< 0.8 V
V
DIAG
< 0.8 V
1
0.2
2
145
0.8
1
4
V
μ
A
%
°
C
Stereo BTL application;
see Figs 6
,
7
,
10
,
11
,
14
,
15
,
18
,
19
,
21
,
22
,
23
,
24
,
26 and 28
THD
total harmonic distortion
f
i
= 10 kHz; P
o
= 1 W; R
L
= 4
;
filter: 22 Hz < f < 30 kHz
f
i
= 1 kHz; P
o
= 1 W; V
P
= 14.4 V;
R
L
= 4
f
i
= 1 kHz; P
o
= 10 W; V
P
= 24 V;
R
L
= 8
THD = 0.5%; V
P
= 14.4 V; R
L
= 4
14
THD = 0.5%; V
P
= 24 V; R
L
= 8
THD = 10%; V
P
= 14.4 V; R
L
= 4
THD = 10%; V
P
= 24 V; R
L
= 8
V
o(rms)
= 3 V
0.2
0.3
%
0.05
0.1
%
0.02
0.05
%
P
o
output power
15
23
20
30
32
33
W
W
W
W
dB
21
18
28
31
G
v
voltage gain
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