參數(shù)資料
型號： TE28F640P30T85
廠商： INTEL CORP
元件分類： DRAM
英文描述： Intel StrataFlash Embedded Memory
中文描述： 4M X 16 FLASH 1.8V PROM, 85 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁數(shù)： 4/102頁
文件大?。?/td> 1609K
代理商： TE28F640P30T85
1-Gbit P30 Family
April 2005
4
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
10.0 Read Operations
....................................................................................................................53
10.1
Asynchronous Page-Mode Read........................................................................................53
10.2
Synchronous Burst-Mode Read..........................................................................................53
10.3
Read Configuration Register ..............................................................................................54
10.3.1 Read Mode............................................................................................................55
10.3.2 Latency Count........................................................................................................55
10.3.3 WAIT Polarity.........................................................................................................57
10.3.4 Data Hold...............................................................................................................58
10.3.5 WAIT Delay............................................................................................................59
10.3.6 Burst Sequence.....................................................................................................59
10.3.7 Clock Edge ............................................................................................................59
10.3.8 Burst Wrap.............................................................................................................59
10.3.9 Burst Length ..........................................................................................................60
11.0 Programming Operations
..................................................................................................61
11.1
Word Programming.............................................................................................................61
11.1.1 Factory Word Programming...................................................................................62
11.2
Buffered Programming........................................................................................................62
11.3
Buffered Enhanced Factory Programming .........................................................................63
11.3.1 BEFP Requirements and Considerations..............................................................64
11.3.2 BEFP Setup Phase................................................................................................64
11.3.3 BEFP Program/Verify Phase.................................................................................64
11.3.4 BEFP Exit Phase...................................................................................................65
11.4
Program Suspend...............................................................................................................65
11.5
Program Resume................................................................................................................66
11.6
Program Protection.............................................................................................................66
12.0 Erase Operations
...................................................................................................................67
12.1
Block Erase.........................................................................................................................67
12.2
Erase Suspend...................................................................................................................67
12.3
Erase Resume....................................................................................................................68
12.4
Erase Protection.................................................................................................................68
13.0 Security Modes
.......................................................................................................................69
13.1
Block Locking......................................................................................................................69
13.1.1 Lock Block .............................................................................................................69
13.1.2 Unlock Block..........................................................................................................69
13.1.3 Lock-Down Block...................................................................................................69
13.1.4 Block Lock Status ..................................................................................................70
13.1.5 Block Locking During Suspend..............................................................................70
13.2
Selectable One-Time Programmable Blocks......................................................................71
13.3
Protection Registers ...........................................................................................................72
13.3.1 Reading the Protection Registers..........................................................................73
13.3.2 Programming the Protection Registers..................................................................73
13.3.3 Locking the Protection Registers...........................................................................74
14.0 Special Read States
.............................................................................................................75
14.1
Read Status Register..........................................................................................................75
14.1.1 Clear Status Register.............................................................................................76
14.2
Read Device Identifier ........................................................................................................76
相關(guān)PDF資料
PDF描述
TE28F128P30B85 Intel StrataFlash Embedded Memory
TE28F160B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F800B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
TE28F400B3-B120 SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F640P30T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR
TE28F640P33B85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR)
TE28F640P33T85A 功能描述:IC FLASH 64MBIT 85NS 56TSOP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 標準包裝:2,500 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
TE28F800B3 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
TE28F800B3B110 制造商:Rochester Electronics LLC 功能描述:- Bulk
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