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參數(shù)資料
| 型號： | TF94435H |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | EMI/RFI ENV B/S SZ 12 CAD O/D |
| 中文描述： | 1350 A, 3500 V, SCR |
| 封裝： | MU169, 4 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 53K |
| 代理商： | TF94435H |
TF944..H
2/7
SURGE RATINGS
Parameter
Conditions
Max.
Units
I
2
t for fusing
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
13.0
kA
A
2
s
Surge (non-repetitive) on-state current
10ms half sine; V
R
= 0% V
RRM
, T
j
= 125C
Symbol
I
TSM
I
2
t
845 x 10
3
THERMAL AND MECHANICAL DATA
dc
Conditions
Min.
Max.
Units
o
C/W
-
-
Anode dc
Clamping force 23.5kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.006
Double side
-
125
o
C
T
vj
Virtual junction temperature
T
stg
Storage temperature range
Reverse (blocking)
Single side
-
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
Clamping force
22.3
24.6
kN
-40
150
o
C
-
On-state (conducting)
-
135
o
C
-
0.012
o
C/W
o
C/W
Cathode dc
-
-
o
C/W
Double side cooled
-
0.02
o
C/W
MEASUREMENT OF RECOVERED CHARGE - Q
RA1
0.5x I
RR
I
RR
Q
RA1
t
p
= 1ms
I
TM
dI
R
/dt
Measurement of Q
RA1
: Q
RA1
= I
RR
x t
RR
2
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