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參數(shù)資料
| 型號(hào)： | TF94435H |
| 廠(chǎng)商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類(lèi)： | 晶閘管 |
| 英文描述： | EMI/RFI ENV B/S SZ 12 CAD O/D |
| 中文描述： | 1350 A, 3500 V, SCR |
| 封裝： | MU169, 4 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 53K |
| 代理商： | TF94435H |
TF944..H
3/7
DYNAMIC CHARACTERISTICS
V
TM
Parameter
Symbol
Conditions
Maximum on-state voltage
At 1500A peak, T
case
= 25
o
C
I
RRM
/I
DRM
Peak reverse and off-state current
At V
RRM
/V
DRM
, T
case
= 125
o
C
Gate source 20V, 20
t
r
≤
0.5
μ
s, T
j
= 125C
dV/dt
Maximum linear rate of rise of off-state voltage
Linear to 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Min.
Max.
Units
-
2.4
V
-
100
mA
-
500
V/
μ
s
Repetitive 50Hz
-
500
A/
μ
s
Non-repetitive
-
800
A/
μ
s
Rate of rise of on-state current
dI/dt
V
T(TO)
Threshold voltage
At T
vj
= 125
o
C
r
T
On-state slope resistance
At T
vj
= 125
o
C
1.35
-
V
-
0.5
m
Delay time
t
gd
-
-*
μ
s
Total turn-on time
t
(ON)TOT
-
-*
μ
s
T
j
= 25C, I
T
= 50A,
V
D
= 300V, I
G
= 1A,
dI/dt = 50A/
μ
s, dI
G
/dt = 1A/
μ
s
*Typical value.
I
H
Holding current
T
j
= 25
o
C, I
TM
= 1A, V
D
= 12V
100*
-
mA
T
= 125C, I
T
= 500A, V
R
= 100V,
dV/dt = 20V/
μ
s to 66% V
DRM
,
dI
R
/dt = 50A/
μ
s.
Turn-off time
t
q
120
-
μ
s
t
q
code: H
GATE TRIGGER CHARACTERISTICS AND RATINGS
I
H
Holding current
T
j
= 25
o
C, I
G
= 0.5A, V
D
= 12V
300*
-
mA
Reverse recovery charge
Q
RR
-
-
μ
C
Symbol
Parameter
Conditions
Gate non-trigger voltage
V
Units
Max.
3.0
0.25
Typ.
mA
V
V
GD
Gate trigger voltage
250
V
GT
I
GT
Gate trigger current
At V
DRM
T
case
= 125
o
C, R
L
= 1k
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6
-
-
-
V
30
0.25
V
V
RGM
Peak reverse gate voltage
V
5.0
-
A
-
-
-
10
I
FGM
Peak forward gate current
Peak forward gate voltage
V
FGM
V
FGN
Peak forward gate voltage
Anode positive with respect to cathode
Anode negative with respect to cathode
Anode positive with respect to cathode
P
GM
P
G(AV)
Peak gate power
Mean gate power
-
-
50
3.0
W
W
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