參數(shù)資料
型號： TGF2022-48
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 衰減器
英文描述： DC - 20 GHz Discrete power pHEMT
中文描述： 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： 0.57 X 2.42 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-18
文件頁數(shù)： 6/8頁
文件大?。?/td> 152K
代理商： TGF2022-48
Advance Product Information
September 19, 2005
TGF2022-48
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
6
Unmatched S-parameters for 4.8 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 360mA
Note: The s-parameters are calculated by connecting nodes 1-8 together, and
nodes 9-16 together to form a 2-port network.
Frequency s11
(GHz)
0.5
s11 ang
deg
-154.69
-167.22
-171.50
-173.66
-174.97
-175.86
-176.50
-176.99
-177.38
-177.70
-177.97
-178.21
-178.41
-178.60
-178.77
-178.92
-179.06
-179.20
-179.33
-179.45
-179.57
-179.68
-179.79
-179.89
-180.00
179.90
179.81
179.71
179.61
179.52
179.43
179.34
179.25
179.16
179.07
178.99
178.90
178.82
178.73
178.65
178.57
178.48
178.40
178.32
178.24
178.16
178.08
178.01
177.93
177.85
177.77
177.70
s21
dB
s21 ang
deg
100.31
90.63
85.31
81.12
77.41
73.96
70.66
67.48
64.39
61.39
58.45
55.59
52.79
50.05
47.37
44.75
42.19
39.69
37.24
34.84
32.50
30.21
27.97
25.78
23.64
21.54
19.48
17.47
15.50
13.56
11.66
s12
dB
s12 ang
deg
s22
dB
s22 ang
deg
-167.50
-171.69
-172.31
-172.05
-171.49
-170.82
-170.14
-169.49
-168.89
-168.37
-167.91
-167.54
-167.23
-167.00
-166.83
-166.72
-166.67
-166.66
-166.70
-166.78
-166.90
-167.04
-167.21
-167.40
-167.61
-167.83
-168.07
-168.32
-168.58
-168.85
-169.12
-169.40
-169.68
-169.96
-170.24
-170.53
-170.81
-171.10
-171.38
-171.66
-171.95
-172.22
-172.50
-172.78
-173.05
-173.32
-173.59
-173.85
-174.12
-174.38
-174.63
-174.89
dB
-0.325
-0.288
-0.280
-0.276
-0.272
-0.270
-0.267
-0.264
-0.260
-0.257
-0.253
-0.250
-0.246
-0.242
-0.238
-0.234
-0.230
-0.226
-0.222
-0.219
-0.215
-0.211
-0.208
-0.204
-0.201
-0.198
-0.195
-0.192
-0.189
-0.186
-0.184
-0.181
-0.179
-0.176
-0.174
-0.172
-0.170
-0.168
-0.166
-0.164
-0.162
-0.161
-0.159
-0.157
-0.156
-0.155
-0.153
-0.152
-0.151
-0.149
-0.148
-0.147
22.299
16.442
12.929
10.408
8.431
6.797
5.399
4.170
3.071
2.072
1.154
0.303
-0.494
-1.244
-1.953
-2.627
-3.270
-3.886
-4.477
-5.045
-5.592
-6.121
-6.632
-7.127
-7.607
-8.073
-8.525
-8.965
-9.392
-9.808
-10.214
-10.609
-11.370
-11.737
-12.096
-12.446
-12.789
-13.124
-13.451
-13.772
-14.087
-14.394
-14.696
-14.992
-15.283
-15.568
-15.848
-16.123
-16.393
-16.659
-16.920
-36.239
-36.078
-36.075
-36.105
-36.153
-36.214
-36.287
-36.371
-36.464
-36.567
-36.678
-36.797
-36.922
-37.054
-37.192
-37.334
-37.481
-37.632
-37.786
-37.942
-38.101
-38.261
-38.423
-38.586
-38.748
-38.911
-39.074
-39.236
-39.397
-39.557
-39.716
-39.872
-40.027
-40.180
-40.330
-40.478
-40.623
-40.765
-40.904
-41.039
-41.172
-41.300
-41.425
-41.547
-41.664
-41.778
-41.887
-41.992
-42.093
-42.189
-42.281
-42.369
12.13
4.39
0.99
-1.27
-3.07
-4.61
-5.99
-7.25
-8.42
-9.50
-10.51
-11.45
-12.32
-13.12
-13.85
-14.53
-15.13
-15.68
-16.16
-16.58
-16.94
-17.25
-17.49
-17.69
-17.82
-17.90
-17.93
-17.91
-17.84
-17.73
-17.56
-17.35
-17.10
-16.80
-16.47
-16.09
-15.68
-15.23
-14.74
-14.22
-13.66
-13.08
-12.46
-11.82
-11.14
-10.44
-9.72
-8.97
-8.20
-7.41
-6.61
-5.78
-4.759
-4.554
-4.470
-4.388
-4.296
-4.191
-4.076
-3.953
-3.822
-3.687
-3.548
-3.409
-3.270
-3.133
-2.998
-2.867
-2.739
-2.616
-2.498
-2.385
-2.276
-2.173
-2.074
-1.981
-1.892
-1.807
-1.727
-1.651
-1.579
-1.510
-1.446
-1.384
-1.326
-1.271
-1.219
-1.169
-1.122
-1.077
-1.034
-0.994
-0.955
-0.919
-0.884
-0.851
-0.819
-0.789
-0.760
-0.733
-0.706
-0.681
-0.657
-0.634
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
9.80
7.97
6.18
4.42
2.69
0.98
-0.69
-2.34
-3.97
-5.57
-7.14
-8.70
-10.23
-11.75
-13.24
-14.72
-16.18
-17.63
-19.05
-20.47
-21.87
相關(guān)PDF資料
PDF描述
TGF2022-60 DC - 20 GHz Discrete power pHEMT
TGF2961-SD Zener Diode; Application: General; Pd (mW): 500; Vz (V): 8.3 to 9.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: LLD
TGF4112 12 mm Discrete HFET
TGF4112-EPU 12 mm Discrete HFET
TGF4118 18 mm Discrete HFET
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參數(shù)描述
TGF2022-60 功能描述:射頻GaAs晶體管 DC-20GHz 6.0mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-01 功能描述:射頻GaAs晶體管 1.25mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-02 功能描述:射頻GaAs晶體管 2.5mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-05 功能描述:射頻GaAs晶體管 5.0mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-10 功能描述:射頻GaAs晶體管 10mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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