參數(shù)資料
型號(hào): TGF4250-SCC
廠商: TRIQUINT SEMICONDUCTOR INC
元件分類: 小信號(hào)晶體管
英文描述: DC - 10.5 GHz Discrete HFET
中文描述: X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET
封裝: DIE-12
文件頁數(shù): 2/9頁
文件大?。?/td> 330K
代理商: TGF4250-SCC
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
Product Data Sheet
December 16, 2002
TGF4250-SCC
2
TABLE I
MAXIMUM RATINGS
SYMBOL
V
DS
V
GS
P
D
T
CH
T
STG
PARAMETER
1/
VALUE
12 V
0 to -5.0 Volts
See Thermal Data
150 C
-65 to 200 C
NOTES
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Operating Channel Temperature
Storage Temperature
2/, 3/
T
M
Mounting Temperature (30 seconds)
320 C
1/ These ratings represent the maximum values for this device. Stresses beyond those listed
under “Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under “DC Probe Characteristics” and “RF Probe Characteristics” is not
implied. Exposure to maximum rated conditions for extended periods may affect device
reliability.
2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the
lowest possible levels.
3/
These ratings apply to each individual FET
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