參數(shù)資料
型號(hào)： TH58NVG1S3AFT
廠商： Toshiba Corporation
英文描述： TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
中文描述： 東芝馬鞍山數(shù)字集成電路硅柵CMOS
文件頁(yè)數(shù)： 2/32頁(yè)
文件大?。?/td> 368K
代理商： TH58NVG1S3AFT
2003-05-19A
2/32
TH58NVG1S3AFT05
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
V
CC
Power Supply Voltage
0.6 to 4.6
V
V
IN
Input Voltage
0.6 to 4.6
V
V
I/O
Input /Output Voltage
0.6 V to V
CC
0.3 V (
4.6 V)
V
P
D
Power Dissipation
0.3
W
T
SOLDER
Soldering Temperature (10s)
260
°C
T
STG
Storage Temperature
-55 to 150
°C
T
OPR
Operating Temperature
0 to 70
°C
CAPACITANCE
*
(Ta
25°C, f
1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
MAX
UNIT
C
IN
Input
V
IN
0 V

20
pF
C
OUT
Output
V
OUT
0 V

20
pF
*
* This parameter is periodically sampled and is not tested for every device.
I/O
Control
circuit
Status register
Address register
Command register
Column buffer
Column decoder
Data register
Sense amp
Memory
cell array
Control
circuit
HV generator
R
Logic
control
BY
/
RY
V
CC
I/O1
V
SS
I/O8
to
WP
CE
CLE
ALE
WE
RE
BY
/
RY
R
d
x
The products described in this document are subject to the foreign exchange and foreign trade laws.
x
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
x
The information contained herein is subject to change without notice.
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