參數(shù)資料
型號(hào)： TH58NVG1S3AFT
廠商： Toshiba Corporation
英文描述： TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
中文描述： 東芝馬鞍山數(shù)字集成電路硅柵CMOS
文件頁(yè)數(shù)： 26/32頁(yè)
文件大?。?/td> 368K
代理商： TH58NVG1S3AFT
2003-05-19A
26/32
TH58NVG1S3AFT05
(7) Status Read during a Read operation
The device status can be read out by inputting the Status Read command “70H” in Read mode.
Once the device has been set to Status Read mode by a “70H” command, the device will not return to
Read mode.
Therefore, a Status Read during a Read operation is prohibited.
However, when the Read command “00H” is input during [A], Status mode is reset and the device returns
to Read mode. In this case, data output starts automatically from address N and address input is
unnecessary
(8) Auto programming failure
(9)
BY
/
RY
: termination for the Ready/Busy pin (
BY
/
RY
)
A pull-up resistor needs to be used for termination because the
circuit.
V
CC
BY
/
RY
buffer consists of an open drain
Fail
80
10
80
10
Address
M
Data
input
70
I/O
Address
N
Data
input
If the programming result for page address M is Fail, do not try to program the
page to address N in another block without the data input sequence.
Because the previous input data has been lost, the same input sequence of 80H
command, address and data is necessary.
10
80
Figure 19.
M
N
This data may vary from device to device.
We recommend that you use this data as a
reference when selecting a resistor value.
V
CC
Device
V
SS
R
BY
/
RY
C
L
1.5
P
s
1.0
P
s
0.5
P
s
0
1 K
:
4 K
:
3 K
:
2 K
:
15 ns
10 ns
5 ns
t
f
t
r
R
t
r
t
f
V
CC
3.3 V
Ta
25°C
C
L
100 pF
Figure 20.
t
f
Ready
3.0 V
V
CC
1.0 V
t
r
3.0 V
1.0 V
Busy
00
Address N
comma
CE
WE
BY
/
RY
RE
[A]
Status Read
command input
Status Read
Status output
Figure 18.
70
00
30
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