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參數(shù)資料
| 型號： | TIM1213-5 |
| 廠商： | Toshiba Corporation |
| 英文描述： | MICROWAVE POWER GaAs FET |
| 中文描述： | 微波功率GaAs場效應管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 85K |
| 代理商： | TIM1213-5 |
MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM1213-5
TECHNICAL DATA
PRE L IMINARY
F E A T U R E S
n
HIGH POWERT
n
BROAD BAND INTERNALLY MATCHED
P1dB=37.0dBm at 12.7GHz to 13.2GHz
n
HERMETICALLY SEALED PACKAGE
n
HIGH GAIN
G1dB=7.0dB at 12.7GHz to 13.2GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25
°
C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
Channel Temperature Rise
ELECTRICAL CHARACTERISTICS ( Ta= 25
°
C )
SYMBOL
P
1dB
CONDITION
UNIT
dBm
MIN.
37.0
TYP. MAX.
37.5
G
1dB
dB
6.0
7.0
I
DS1
η
add
Tch
A
%
°
C
2.0
25
2.5
80
VDS= 9V
f= 12.7 to 13.2GHz
V
DS
X I
DS
X R
th(c-c)
CHARACTERISTICS
Transconductance
SYMBOL
gm
CONDITION
V
DS
=
3V
I
DS
= 2.4A
V
DS
=
3V
I
DS
= 72mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -72
μ
A
UNIT
mS
MIN.
TYP.
1400
MAX.
Pinch-off Voltage
V
GSoff
V
-2.0
-3.5
-5.0
Saturated Drain Current
I
DSS
A
5.0
5.7
Gate-Source Breakdown
Voltage
Thermal Resistance
V
GSO
V
-5
R
th(c-c)
Channel to Case
°
C/W
3.0
3.7
u
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Jun. 2002
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相關代理商/技術參數(shù) |
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