參數(shù)資料
型號: TMS27C256-150
廠商: Texas Instruments, Inc.
英文描述: Programmable Read-Only Memory(32K×8結(jié)構(gòu),可擦可編程只讀存儲器)
中文描述: 可編程只讀存儲器(32K的× 8結(jié)構(gòu),可擦可編程只讀存儲器)
文件頁數(shù): 7/13頁
文件大?。?/td> 280K
代理商: TMS27C256-150
TMS27C256 262144-BIT UV ERASABLE PROGRAMMABLE
TMS27PC256 262144-BIT PROGRAMMABLE
READ-ONLY MEMORY
SMLS256G – SEPTEMBER 1984 – REVISED JUNE 1995
7
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
recommended operating conditions
MIN
4.5
NOM
MAX
5.5
UNIT
VCC
Supply voltage
Read mode (see Note 2)
5
V
SNAP! Pulse programming algorithm
6.25
6.5
6.75
VPP
Supply voltage
Read mode
VCC–0.6
12.75
VCC+0.6
13.25
V
SNAP! Pulse programming algorithm
13
VIH
High-level dc input voltage
TTL
2
VCC+1
VCC+1
0.8
V
CMOS
VCC– 0.2
– 0.5
VIL
Low-level dc input voltage
TTL
V
CMOS
– 0.5
0.2
TA
Operating free-air temperature
’27C256-_ _JL, JL4
’27PC256-_ _NL, NL4,
FML, FML4
0
70
°
C
TA
Operating free-air temperature
’27C256-_ _JE, JE4
’27PC256-_ _NE, NE4,
FME, FME4
– 40
85
°
C
NOTE 2: VCC must be applied before or at the same time as VPP and removed after or at the same time as VPP. The device must not be inserted
into or removed from the board when VPP or VCC is applied.
electrical characteristics over recommended ranges of operating conditions
PARAMETER
TEST CONDITIONS
IOH = – 2.5 mA
IOH = – 20
μ
A
IOL = 2.1 mA
IOL = 20
μ
A
VI = 0 V to 5.5 V
VO = 0 V to VCC
VPP = VCC = 5.5 V
VPP = 13 V
VCC = 5.5 V,
VCC = 5.5 V,
VCC = 5.5 V,
tcycle = minimum cycle time,
outputs open
MIN
3.5
TYP
MAX
UNIT
VOH
High-level dc output voltage
V
VCC– 0.1
VOL
Low-level dc output voltage
0.4
V
0.1
±
1
±
1
10
II
IO
IPP1
IPP2
Input current (leakage)
μ
A
μ
A
μ
A
mA
Output current (leakage)
VPP supply current
VPP supply current (during program pulse)
VCC supply current
(standby)
1
35
50
ICC1
TTL-input level
E = VIH
E = VCC
E = VIL,
250
500
μ
A
CMOS-input level
100
250
ICC2
VCC supply current (active)
15
30
mA
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Ci
Co
Typical values are at TA = 25
°
C and nominal voltages.
Capacitance measurements are made on a sample basis only.
Input capacitance
VI = 0,
VO = 0,
f = 1 MHz
6
10
pF
Output capacitance
f = 1 MHz
10
14
pF
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