參數(shù)資料
型號: TMS27C512-150
廠商: Texas Instruments, Inc.
英文描述: Programmable Read-Only Memory(64K×8結構,可擦可編程只讀存儲器)
中文描述: 可編程只讀存儲器(64K的× 8結構,可擦可編程只讀存儲器)
文件頁數(shù): 10/13頁
文件大?。?/td> 283K
代理商: TMS27C512-150
TMS27C512 524288-BIT UV ERSABLE PROGRAMMABLE
TMS27PC512 524288-BIT PROGRAMMABLE
READ-ONLY MEMORY
SMLS512F – NOVEMBER 1985 – REVISED JUNE 1995
10
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
recommended timing requirements for programming: V
CC
= 6.50 V and G/V
PP
= 13
V
(SNAP! Pulse), T
A
= 25
°
C (see Note 3)
MIN
TYP
MAX
UNIT
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
μ
s
ns
tw(IPGM)
tsu(A)
tsu(D)
tsu(VPP
tsu(VCC)
th(A)
th(D)
th(VPP)
trec(PG)
tEHD
tr(PG)G
NOTE 3. For all switching characteristics the input pulse levels are 0.4 V to 2.4 V. Timing measurements are made at 2 V for logic high and
0.8 V for logic low. (Reference below.)
Pulse duration, initial program
95
100
105
Setup time, address
2
Setup time, data
2
Setup time, G/VPP
Setup time, VCC
Hold time, address
2
2
0
Hold time, data
2
Hold time, G/VPP
Recovery time, G/VPP
Data valid from E low
2
2
1
Rise time, G/VPP
50
PARAMETER MEASUREMENT INFORMATION
2.08 V
RL = 800
Output
Under Test
CL = 100 pF
Figure 2. AC Testing Output Load Circuit
AC testing input/output wave forms
2.4 V
0.4 V
2 V
0.8 V
2 V
0.8 V
A.C. testing inputs are driven at 2.4 V for logic high and 0.4 V for logic low. Timing measurements are made at
2 V for logic high and 0.8 V for logic low for both inputs and outputs.
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