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參數(shù)資料
| 型號(hào)： | TPC6005 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) |
| 中文描述： | 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型（U型MOSIII） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 188K |
| 代理商： | TPC6005 |
TPC6005
2001-12-17
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
10 V, V
DS
0 V
10
A
Drain cut-OFF current
I
DSS
V
DS
30 V, V
GS
0 V
10
A
V
(BR) DSS
I
D
10 mA, V
GS
0 V
30
Drain-source breakdown voltage
V
(BR) DSX
I
D
10 mA, V
GS
12 V
18
V
Gate threshold voltage
V
th
V
DS
10 V, I
D
200 A
0.5
1.2
V
V
GS
2.0 V, I
D
3 A
31
41
V
GS
2.5 V, I
D
3 A
27
35
Drain-source ON resistance
R
DS (ON)
V
GS
4.5 V, I
D
3 A
21
28
m
Forward transfer admittance
|Y
fs
|
V
DS
10 V, I
D
3 A
5
10
S
Input capacitance
C
iss
1420
Reverse transfer capacitance
C
rss
170
Output capacitance
C
oss
V
DS
10 V, V
GS
0 V, f 1 MHz
180
pF
Rise time
t
r
8
Turn-ON time
t
on
13
Fall time
t
f
18
Switching time
Turn-OFF time
t
off
Duty
1%, t
w
10 s
70
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
19
Gate-source charge
Q
gs
13.5
Gate-drain (“miller”) charge
Q
gd
V
DD
24 V, V
GS
5 V, I
D
6 A
5.5
nC
Source-Drain Ratings and Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Pulse drain reverse current
(Note 1)
I
DRP
24
A
Forward voltage (Diode)
V
DSF
I
DR
6 A, V
GS
0 V
1.2
V
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: V
DD
24 V, T
ch
25°C (initial), L 0.5 mH, R
G
25 , I
AR
3.0 A
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5: Black round marking
“ ”
locates on the left lower side of parts number marking “S2E” indicates terminal
No.1.
(a)
FR-4
25.4 25.4 0.8
Unit: (mm)
(b)
FR-4
25.4 25.4 0.8
Unit: (mm)
R
L
V
DD
15 V
0 V
V
GS
5 V
4
I
D
3 A
V
OUT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TPC6005(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N CH, 6A, 30V, TSOP6 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 30V 6A VS6 |
| TPC6005(TE85L,F,M) | 功能描述:MOSFET MOSFET N-Ch 30V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TPC6005(TE85LF) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N CH 6A 30V TSOP6 |
| TPC6005_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Notebook PC Applications Portable Equipment Applications |
| TPC6006-H(TE85L,F) | 功能描述:MOSFET MOSFET N-Ch 40V 3.9A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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