參數(shù)資料
型號: TPC6108
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4)
中文描述: 東芝場效應(yīng)晶體管硅P通道馬鞍山型(U型MOS4)
文件頁數(shù): 1/4頁
文件大?。?/td> 62K
代理商: TPC6108
TPC6108
2004-10-28
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS
TPC6108
)
Notebook PC Applications
Portable Equipment Applications
Small footprint due to small and thin package
Low drain-source ON resistance: R
DS (ON)
= 50 m
(typ.)
High forward transfer admittance: |Y
fs
| = 7.4 S (typ.)
Low leakage current: I
DSS
=
1
0 μA (max) (V
DS
=
30 V)
Enhancement-model: V
th
=
0.8 to
2.0 V
(V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
30
V
Drain-gate voltage (R
GS
=
20 k
)
V
DGR
30
V
Gate-source voltage
V
GSS
±
20
V
DC
(Note 1)
I
D
4.5
Drain current
Pulse
(Note 1)
I
DP
18
A
Drain power dissipation(t
=
5 s) (Note 2a)
P
D
2.2
Drain power dissipation(t
=
5 s) (Note 2b)
P
D
0.7
W
Single pulse avalanche energy
(Note 4)
E
AS
1.3
mJ
Avalanche current
I
AR
2.25
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
E
AR
0.22
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient(t
=
5 s)
(Note 2a)
R
th (ch-a)
56.8
°C/W
Thermal resistance, channel to ambient(t
=
5 s)
(Note 2b)
R
th (ch-a)
178.5
°C/W
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer
to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
5
6
4
1
2
3
TENTATIVE
Drain
Drain
Gate
Source
Drain
Drain
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