參數(shù)資料
型號(hào)： TPC6108
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4)
中文描述： 東芝場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型（U型MOS4）
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 62K
代理商： TPC6108
TPC6108
2004-10-28
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
I
DSS
V
GS
=
±
16 V, V
DS
=
0 V
V
DS
=
30 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
20 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
4.5 V, I
D
=
2.2 A
V
GS
=
10
V, I
D
=
2.2
A
V
DS
=
10 V, I
D
=
2.2 A
±
10
μ
A
Drain cut-off current
10
μ
A
V
(BR) DSS
V
(BR) DSX
V
th
R
DS (ON)
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
30
Drain-source breakdown voltage
15
V
Gate threshold voltage
0.8
2.0
V
75
100
Drain-source ON resistance
50
60
m
Forward transfer admittance
3.7
7.4
S
Input capacitance
570
Reverse transfer capacitance
75
Output capacitance
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
85
pF
Rise time
t
r
3.5
Turn-on time
t
on
12
Fall time
t
f
21
Switching time
Turn-off time
t
off
V
GS
Duty
<
1%, t
w
=
10
μ
s
70
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
13
Gate-source charge1
Q
gs1
Q
gd
1.8
Gate-drain (“miller”) charge
V
DD
～
24 V, V
GS
=
10 V,
I
D
=
4.5 A
2.5
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
18
A
Forward voltage (diode)
V
DSF
I
DR
=
4.5 A, V
GS
=
0 V
1.2
V
TENTATIVE
L
=
V
DD
～
15 V
10 V
0 V
4
I
D
=
2.2 A
V
OUT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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