參數(shù)資料
型號(hào): TPC8207
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
中文描述: 東芝場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山型(U型MOSIII)
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 219K
代理商: TPC8207
TPC8207
2004-07-06
3
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
10 V, V
DS
=
0 V
±
10
μ
A
Drain cut-OFF current
I
DSS
V
DS
=
20 V, V
GS
=
0 V
10
μ
A
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
20
Drain-source breakdown voltage
V
(BR) DSX
I
D
=
10 mA, V
GS
=
12 V
8
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
200
μ
A
0.5
1.2
V
V
GS
=
2.0 V, I
D
=
4.2 A
22
45
V
GS
=
2.5 V, I
D
=
4.2 A
19
30
Drain-source ON resistance
R
DS (ON)
V
GS
=
4.0 V, I
D
=
4.8 A
16
20
m
Forward transfer admittance
|Y
fs
|
V
DS
=
10 V, I
D
=
3.0 A
5.5
11
S
Input capacitance
C
iss
2010
Reverse transfer capacitance
C
rss
210
Output capacitance
C
oss
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
240
pF
Rise time
t
r
6
Turn-ON time
t
on
14
Fall time
t
f
22
Switching time
Turn-OFF time
t
off
Duty
<
1%, t
w
=
10
μ
s
94
ns
Total gate charge
(gate-source plus gate-drain)
Q
g
22
Gate-source charge 1
Q
gs1
3.2
Gate-drain (“miller”) charge
Q
gd
V
DD
16 V, V
GS
=
5 V, I
D
=
6 A
4.7
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse (Note 1)
I
DRP
24
A
Forward voltage (diode)
V
DSF
I
DR
=
6 A, V
GS
=
0 V
1.2
V
R
L
=
V
DD
10 V
0 V
V
GS
5 V
4
I
D
=
3 A
V
OUT
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