參數(shù)資料
型號： TPC8209
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)
文件頁數(shù)： 6/7頁
文件大?。?/td> 312K
代理商： TPC8209
TPC8209
2003-02-18
6
Drain-source voltage V
DS
(V)
D
D
Safe operating area
Pulse width t
w
(S)
r
th
t
w
N
r
t
0.1
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
Single pulse
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t 10 s
(1)
(2)
(3)
(4)
0.1
1
10
100
0.1
1
10
100
*
Single pulse
Ta 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (pluse)
*
VDSS max
1 ms
*
10 ms
*
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