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參數(shù)資料
| 型號： | TPR500A |
| 英文描述： | TRANSISTOR | BJT | NPN | 40A I(C) | FO-91VAR |
| 中文描述： | 晶體管|晶體管|叩| 40A條一（c）|佛91VAR |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 269K |
| 代理商： | TPR500A |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
TPR 500
500 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 500 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input prematch for broadband capability. Low thermal
resistance package reduces junction temperature, extends life.
CASE OUTLINE
55CX, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 1750 Watts
2
Maximum Voltage and Current
BVces Collector to Base Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 40 Amps
Maximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
F = 1090 MHz
Vcc = 50 Volts
PW = 10
μ
sec
DF = 1%
F = 1090 MHz
500
5.2
6.0
35
150
10:1
Watts
Watts
dB
%
BVebo
BVces
h
FE
θ
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
Ie = 30 mA
Ic = 30 mA
Ic = 500mA, Vce = 5 V
3.5
55
10
0.1
Volts
Volts
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June 1, 1994
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