參數(shù)資料
型號(hào)： TPS24711DGSR
廠商： TEXAS INSTRUMENTS INC
元件分類(lèi)： 電源管理
英文描述： POWER SUPPLY SUPPORT CKT, PDSO10
封裝： GREEN, PLASTIC, MSOP-10
文件頁(yè)數(shù)： 33/34頁(yè)
文件大?。?/td> 2148K
代理商： TPS24711DGSR
LIM
PROG
SENSE
3125
P
R
=
SLVSAL2C
– JANUARY 2011 – REVISED MAY 2011
– VVCC drops below the UVLO threshold
2. GATE is pulled down by a 1 A current source for 13.5
s when a hard output short circuit occurs and
V(VCC – SENSE) is greater than 60 mV, i.e., the fast-trip shutdown threshold. After fast-trip shutdown is
complete, an 11-mA sustaining current ensures that the external MOSFET remains off.
3. GATE is discharged by a 20 k
resistor to GND if the chip die temperature exceeds the OTSD rising
threshold.
GATE remains low in latch mode (TPS24710/12) and attempts a restart periodically in retry mode
(TPS24711/13).
If used, any capacitor connecting GATE and GND should not exceed 1
μF and it should be connected in series
with a resistor of no less than 1 k
. No external resistor should be directly connected from GATE to GND or from
GATE to OUT.
GND: This pin is connected to system ground.
OUT: This pin allows the controller to measure the drain-to-source voltage across the external MOSFET M1. The
power-good indicator (PG/PGb) relies on this information, as does the power limiting engine. The OUT pin should
be protected from negative voltage transients by a clamping diode or sufficient capacitors. A Schottky diode of
3 A / 40 V in a SMC package is recommended as a clamping diode for high-power applications. The OUT pin
should be bypassed to GND with a low-impedance ceramic capacitor in the range of 10 nF to 1
μF.
PG: PG is assigned for TPS24712/13. This active-high, open-drain output is intended to interface to downstream
dc/dc converters or monitoring circuits. PG assumes high-impedance after the drain-to-source voltage of the FET
has fallen below 170 mV and a 3.4-ms deglitch delay has elapsed. It pulls low when VDS exceeds 240 mV. PG
assumes low-impedance status after a 3.4-ms deglitch delay once VDS of M1 rises up, resulting from GATE being
pulled to GND at any of the following conditions:
An overload current fault occurs (VSENSE > 25 mV).
A hard output short circuit occurs, leading to V(VCC – SENSE) greater than 60 mV, i.e., the fast-trip shutdown
threshold has been exceeded.
VEN is below its falling threshold.
VVCC drops below the UVLO threshold.
Die temperature exceeds the OTSD threshold.
This pin can be left floating when not used.
PGb: PGb is assigned for TPS24710/11. This active-low, open-drain output is intended to interface to
downstream dc/dc converters or monitoring circuits. PGb pulls low after the drain-to-source voltage of the FET
has fallen below 170 mV and a 3.4-ms deglitch delay has elapsed. It goes open-drain when VDS exceeds 240
mV. PGb assumes high-impedance status after a 3.4-ms deglitch delay once VDS of M1 rises up, resulting from
GATE being pulled to GND at any of the following conditions:
An overload current fault occurs (VSENSE > 25 mV).
A hard output short circuit occurs, leading to V(VCC – SENSE) greater than 60 mV, i.e., the fast-trip shutdown
threshold has been exceeded.
VEN is below its falling threshold.
VVCC drops below the UVLO threshold.
Die temperature exceeds the OTSD threshold.
This pin can be left floating when not used.
PROG: A resistor from this pin to GND sets the maximum power permitted in the external MOSFET M1 during
inrush. Do not apply a voltage to this pin. If the constant power limit is not desired, use a PROG resistor of
4.99 k
. To set the maximum power, use Equation 1,
(1)
where PLIM is the allowed power limit of MOSFET M1. RSENSE is the load-current-monitoring resistor connected
between the VCC pin and the SENSE pin. RPROG is the resistor connected from the PROG pin to GND. Both
RPROG and RSENSE are in ohms and PLIM is in watts. PLIM is determined by the maximum allowed thermal stress of
MOSFET M1, given by Equation 2,
8
Copyright
2011, Texas Instruments Incorporated
Product Folder Link(s): TPS24710 TPS24711 TPS24712 TPS24713
相關(guān)PDF資料
PDF描述
TPS2481PW POWER SUPPLY SUPPORT CKT, PDSO20
TPS2480PW POWER SUPPLY SUPPORT CKT, PDSO20
TPS2490DGSRG4 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10
TPS2490DGSR 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10
TPS2490DGSG4 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TPS24711EVM-004 功能描述:電源管理IC開(kāi)發(fā)工具 TPS24711 Eval Mod RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類(lèi)型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V
TPS24712DGS 功能描述:熱插拔功率分布 2.5-18V Hi Eff Pwr- Ltd Hot-Swap Cntrlr RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
TPS24712DGSR 功能描述:熱插拔功率分布 2.5-18V Hi Eff Pwr- Ltd Hot-Swap Cntrlr RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
TPS24713DGS 功能描述:熱插拔功率分布 2.5-18V Hi Eff Hot- Swap Controller RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
TPS24713DGSR 功能描述:熱插拔功率分布 2.5-18V Hi Eff Hot- Swap Controller RoHS:否 制造商:Texas Instruments 產(chǎn)品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*