參數(shù)資料
型號(hào)： TPS40055MPWPREPG4
廠商： TEXAS INSTRUMENTS INC
元件分類： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16
封裝： PLASTIC, HTSSOP-16
文件頁(yè)數(shù)： 10/35頁(yè)
文件大小： 2348K
代理商： TPS40055MPWPREPG4
SGLS310B – JULY 2005 – REVISED OCTOBER 2010
www.ti.com
The 10-V reference pin, BP10V provides energy for both the synchronous MOSFET and the high-side MOSFET
via the BOOST capacitor. Neglecting any efficiency penalty, the BP10V capacitance is described in Equation 30.
(30)
dv/dt INDUCED TURN-ON
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (VDS) applications. The turn-on is caused
by the capacitor divider that is formed by CGD and CGS. High dv/dt conditions and drain-to-source voltage, on the
MOSFET causes current flow through CGD and causes the gate-to-source voltage to rise. If the gate-to-source
voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large shoot-through
currents. Therefore, the SR MOSFET should be chosen so that the CGD capacitance is smaller than the CGS
capacitance.
HIGH SIDE MOSFET POWER DISSIPATION
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the IRMS current through the MOSFET and the RDS(on) of the MOSFET. The
high-side MOSFET conduction losses are defined by Equation 31.
(31)
where:
TCR is the temperature coefficient of the MOSFET RDS(on)
The TCR varies depending on MOSFET technology and manufacturer, but typically ranges between
0.0035 ppm/°C and 0.01 ppm/°C.
The IRMS current for the high side MOSFET is described in Equation 32.
(32)
The switching losses for the high-side MOSFET are described in Equation 33.
(33)
where:
IO is the dc-output current
tSW is the switching rise time, typically < 20 ns
fSW is the switching frequency
Typical switching waveforms are shown in Figure 15.
18
Copyright 2005–2010, Texas Instruments Incorporated
Product Folder Link(s): TPS40055-EP
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