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參數(shù)資料
| 型號： | TSM1N60LCP |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | N-Channel Power Enhancement Mode MOSFET |
| 中文描述： | N溝道功率增強型MOS管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 181K |
| 代理商： | TSM1N60LCP |
TSM1N60L
1-4
2006/01 rev. A
TSM1N60L
N-Channel Power Enhancement Mode MOSFET
V
DS
= 600V
I
D
= 1A
R
DS (on)
, Vgs @ 10V, Ids @ 0.6A = 10
General Description
The TSM1N60L is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are
critical and offer additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
I
DSS
and V
DS(on)
specified at elevated temperature
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM1N60LCP
Tape & Reel
TO-252
TSM1N60LCH
Tube
TO-251
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
600V
V
Gate-Source Voltage
V
GS
± 30
V
Continuous Drain Current
I
D
1
A
Pulsed Drain Current
I
DM
9
A
Ta = 25
o
C
28
W
Maximum Power Dissipation
Ta > 25
o
C
P
D
0.22
W/
o
C
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
o
C
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 500V, V
GS
=10V, I
AS
=1A, L=115mH, R
G
=25
)
Thermal Performance
E
AS
50
mJ
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
10
S
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
R
θ
ja
50
o
C/W
Pin assignment:
1. Gate
2. Drain
3. Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSM1N60S_07 | 600V N-Channel Power MOSFET |
| TSM1N60SCT | 600V N-Channel Power MOSFET |
| TSM1N60S | N-Channel Power Enhancement Mode MOSFET |
| TSM1N60SCTA3 | N-Channel Power Enhancement Mode MOSFET |
| TSM1N60SCTB0 | N-Channel Power Enhancement Mode MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM1N60LCP R0 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) TO-252 T/R |
| TSM1N60SCT | 功能描述:MOSFET 600V 1A N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N60SCT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Ammo |
| TSM1N80CW | 功能描述:MOSFET 800V N Channel Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM1N80SCT | 功能描述:MOSFET 800V N Channel Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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