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參數(shù)資料
| 型號： | TSM25N03CPRO |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 25V N-Channel MOSFET |
| 中文描述： | 25V的N溝道MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 309K |
| 代理商： | TSM25N03CPRO |
TSM25N03
25V N-Channel MOSFET
1/6
Version: A07
TO-252
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
Dc-DC Converters and Motors Drivers
Ordering Information
Part No.
TSM25N03CP RO
Package
TO-252
Packing
2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
a,b
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 100V, V
GS
=10V, I
AS
=2A, L=10mH, R
G
=25
Ω
)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
25
±20
25
100
20
Unit
V
V
A
A
A
EAS
45
mJ
Ta = 25
o
C
Ta = 70
o
C
60
23
+150
Maximum Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
o
C
o
C
T
J
, T
STG
-55 to +150
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t
≤
10 sec.
Symbol
T
L
R
JC
R
JA
Limit
10
1.8
40
Unit
S
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m
Ω
)
I
D
(A)
14 @ V
GS
= 10V
25
25
19 @ V
GS
= 4.5V
25
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
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