參數(shù)資料
型號： TSPC106AVGSU83CG
英文描述： MEMORY CONTROLLER
中文描述： 內(nèi)存控制器
文件頁數(shù)： 24/40頁
文件大小： 569K
代理商： TSPC106AVGSU83CG
24
TSPC106
2102B
–
HIREL
–
02/02
Electrical Characteristics
General Requirements
All static and dynamic electrical characteristics specified for inspection purposes and the
relevant measurement conditions are given in Table 15.
Notes:
1. Excludes test signals (LSSD_MODE and JTAG signals).
2. This value represents worst case 40 Ohm drivers (default value for Processor/L2 control signals CI, WT, GBL, TBST, TSIZ[0-
2], TT[0-4], TWE, and TV) only. Other signals have lower default driver impedance and will support larger I
OH
and I
OL
. All
drivers may optionally be programmed to different driver strengths.
3. Capacitance is periodically sampled rather than 100% tested.
Table 14.
Recommended Operating Conditions
Characteristic
Symbol
Value
Unit
Notes
Supply voltage
V
DD
3.3
±
165 mv
V
PLL supply voltage
AV
DD
Min 2.51 - Max 3.465
V
Input voltage
V
in
0 to 5.5
V
Die junction
temperature
T
j
0 to 105
°
C
The extended temperature parts
have die junction temperature of -40
to 105
°
C
Table 15.
Clock DC Timing Specifications (V
DD
= 3.3V ± 5% dc, GND = 0V dc, -55
°
C
≤
T
C
≤
125
°
C)
Symbol
Characteristic
Min
Max
Unit
V
IH
Input high voltage (all inputs except SYSCLK)
2
5.5
V
V
IL
Input low voltage (all inputs except SYSCLK)
GND
0.8
V
CV
IH
SYSCLK input high voltage
2.4
5.5
V
CV
IL
SYSCLK input low voltage
GND
0.4
V
I
in
Input leakage current, V
IN
= 3.3V
(1)
Hi-Z (off-state) leakage current, V
IN
= 3.3V
(1)
15.0
μA
I
TSI
15.0
μA
V
OH
Output high voltage, I
OH
= -7 mA
2.4
V
V
OL
Output low voltage, I
OL
= 7 mA
0.5
V
V
OH
PCI 3.3V signaling output high voltage,
I
OH
= -0.5 mA
2.7
V
V
OL
PCI 3.3V signaling output low voltage, I
OL
= 1.5 mA
Capacitance, V
in
= 0V, f = 1 MHz
(2)
0.3
V
C
in
7.0
pF
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