參數(shù)資料
型號： TWL2214CA
英文描述： High voltage fast-switching NPN power transistor
中文描述： 電源管理IC和鋰離子電池充電控制
文件頁數(shù)： 10/36頁
文件大小： 511K
代理商： TWL2214CA
SLVS321A
–
OCTOBER 2001
–
REVISED JANUARY 2002
10
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
dual-interface serial bus: DISB
The DISB is a three-wire interface bus that incorporates both Phillips I
2
C and three-wire SPI. The SPI interface
used here is different from the standard SPI interface; it combines both transmit and receive channels into one
bidirectional port. It also incorporates the slave addressing topology to work like a bus and control many devices
at the same time. The interface does not have a selection pin to choose between the two protocols. It uses the
clock enable line to distinguish the communication format of the interface. When clock enable is high, the clock
and data lines work as a standard I
2
C interface. However, on the falling edge of clock enable, the device expects
the SPI protocol defined in the following section. The protocol includes a slave address identifier that allows the
lines to be connected to many devices similar to that of I
2
C serial bus. Speed also improves when eliminating
the master wait period to receive an acknowledge from the slave device.
battery charger control
This block provides the necessary signals to control the external circuits that perform the charger function. The
charging activities include battery pack wake-up, precharge, fast charge, and battery temperature monitoring.
This block also provides 2 ADC inputs for general measurement purposes. The input voltage level is from 0 V
to 2 V. This block also includes an oscillator generator circuit, which generates the clocks for the device. The
nominal frequency of the main clock is 500 kHz. It requires an external capacitor of 470 pF.
reference system
This block provides voltage reference and bias current for the internal circuitry.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
V
CHG
to GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All other terminals relative to GND
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating ambient temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating junction temperature range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
STG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Soldering temperature (for 10 seconds)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–
0.3 V to 12 V
–
0.3 V to 6.5 V
–
40
°
C to 85
°
C
–
25
°
C to 150
°
C
–
55
°
C to 150
°
C
260
°
C
Stresses beyond those listed under
“
absolute maximum ratings
”
may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under
“
recommended operating conditions
”
is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
recommended operating conditions
MIN
MAX
UNIT
VCHG
VDD1, VDD2, VDD3, VDD4, VDD5
High-level logic input, PWRKIN, SEL, CONT
4.5
6
V
3.3
4.3
V
0.7VDD1
GND
VDD1
0.3VDD1
VREG1
0.3VREG1
100
V
Low-level logic input, PWRKIN, SEL, CONT
V
High-level logic input, PSH and CE
0.7VREG1
GND
V
Low-level logic input, PSH and CE
V
Precharge current
mA
°
C
Operating free-air temperature, TA
–
40
85
logic level output
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
VOH of terminals PWRKOUT, IRQ, CE
VOL of terminals PWRKOUT, IRQ, CE
VOL of DATA
VOH of XRST
VOL of XRST
IOH =
–
2 mA
IOL = 2 mA
IOL = 2 mA
IOH =
–
2 mA (open drain with 100 k
internal pullup)
IOL = 2 mA (open drain 100 k
internal pullup)
0.8VREG1
GND
VREG1
0.22VREG1
0.22VREG1
VREG1
0.22VREG1
V
V
GND
V
V
GND
V
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