參數(shù)資料
型號： UNR421E
廠商： PANASONIC CORP
元件分類： 小信號晶體管
英文描述： Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Through Hole RoHS Compliant: Yes
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, NS-B1, 3 PIN
文件頁數(shù)： 2/14頁
文件大?。?/td> 334K
代理商： UNR421E
2
UNR421x Series
SJH00020BED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
= 50 V, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
50
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
Emitter-base
UNR4210/4215/4216/4217
I
EBO
V
EB
= 6 V, I
C
= 0
0.01
mA
cutoff current
UNR4213
0.1
(Collector open)
UNR4212/4214/421D/421E
0.2
UNR4211
0.5
UNR421F/421K
1.0
UNR4219
1.5
UNR4218/421L
2.0
Forward current
UNR4218/421K/421L
h
FE
V
CE
=
10 V, I
C
=
5 mA
20
transfer ratio
UNR4219/421D/421F
30
UNR4211
35
UNR4212/421E
60
UNR4213/4214
80
UNR4210
*
/4215
*
/4216
*
/
4217
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
0.2
V
UNR4213/421K
UNR421D
UNR421E
Transition frequency
f
T
150
MHz
Input
UNR4218
R
1
30%
0.51
+
30%
k
resistance
UNR4219
1.0
UNR4216/421F/421L
4.7
UNR4211/4214/4215/421K
10
UNR4212/4217
22
UNR4210/4213/421D/421E
47
Resistance
UNR4218/4219
R
1
/R
2
0.08
0.10
0.12
ratio
UNR4214
0.17
0.21
0.25
UNR421F
0.37
0.47
0.57
UNR4211/4212/4213/421L
0.8
1.0
1.2
UNR421K
1.70
2.13
2.60
UNR421E
1.70
2.14
2.60
UNR421D
3.7
4.7
5.7
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
相關PDF資料
PDF描述
UNR421K Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR421L Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
UNR421X Silicon NPN epitaxial planar type
UNR4221 Silicon NPN epitaxial planar type
UNR4222 Silicon NPN epitaxial planar type
相關代理商/技術參數(shù)
參數(shù)描述
UNR421E(UN421E) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內蔵型トランジスタ
UNR421F 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR421F(UN421F) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor
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