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參數(shù)資料
| 型號： | UNR421E |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Through Hole RoHS Compliant: Yes |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, NS-B1, 3 PIN |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 334K |
| 代理商： | UNR421E |
8
UNR421x Series
SJH00020BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR4217
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR4218
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
12
2
10
4
8
6
0
120
100
80
60
40
20
Collector-emitter voltage V
CE
(V)
C
C
T
a
=
25
°
C
I
B
=
1 .0 mA
0.90.8 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.7 0.6 mA
0.01
0.1
0.1
1
10
100
1
10
100
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(mA)
0
1
100
200
300
400
10
100
1
000
F
F
Collector current I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0.01
0.1
0.1
1
10
100
1
10
100
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
V
O
=
5 V
T
a
=
25
°
C
O
O
μ
A
0
0.1
6
5
4
3
2
1
1
10
100
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
C
o
Collector-base voltage V
CB
(V)
0
12
2
10
4
8
6
0
240
200
160
120
80
40
Collector-emitter voltage V
CE
(V)
C
C
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.90.80.7 mA
0.01
0.1
0.1
1
10
100
1
10
100
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
40
80
120
160
10
100
1
000
F
F
Collector current I
C
(mA)
V
CE
=
10 V
T
a
= 75
°
C
25
°
C
25
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR421K | Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| UNR421L | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes |
| UNR421X | Silicon NPN epitaxial planar type |
| UNR4221 | Silicon NPN epitaxial planar type |
| UNR4222 | Silicon NPN epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR421E(UN421E) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ |
| UNR421F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR421F(UN421F) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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