參數(shù)資料
型號: UPA2451B
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 3/8頁
文件大?。?/td> 147K
代理商: UPA2451B
Data Sheet G16636EJ1V0DS
3
μ
PA2451B
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
175
Mounted on ceramic board of
50 cm
2
x 1.1 mm, 2 units
Mounted on FR-4 board of
50 cm
2
x 1.1 mm, 2 units
T
A
- Ambient Temperature -
°
C
FORWARD BIAS SAFE OPERATING AREA
I
D
0.01
0.1
1
10
100
1000
0.1
1
10
100
R
DS(on)
Limited
(at V
GS
= 4.5 V)
PW = 10
μ
s
I
D(pulse)
I
D(DC)
DC (2 units)
100
μ
s
30 ms
1 ms
10 ms
Single pulse
Mounted on ceramic board of
50 cm
2
x 1.1 mm
P
D
(FET1) : P
D
(FET2) = 1:1
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
0.1
1 m
1
10
100
1000
Mounted on ceramic board of
50 cm
2
x 1.1 mm
Single pulse
P
D
(FET1) : P
D
(FET2) = 1:1
Mounted on FR-4 board of
50 cm
2
x 1.1 mm
PW - Pulse Width - s
10 m
100 m
1
10
100
1000
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