參數(shù)資料
型號: UPA2451B
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場效應(yīng)晶體管開關(guān)
文件頁數(shù): 6/8頁
文件大?。?/td> 147K
代理商: UPA2451B
Data Sheet G16636EJ1V0DS
6
μ
PA2451B
<Notes for using this device safely>
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding
the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of
the device and characteristic degradation.
1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result in
failure.
2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
4. Please refer to
Figure 1
as an example of the land pattern. Optimize the land pattern in consideration of density,
appearance of solder fillets, common difference, etc in an actual design.
Figure 1. Example of the land pattern
3.86
2.04
0.83
0.30
Unit: mm
0.50
1
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