- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376421 > UPA2730TP (NEC Corp.) SWITCHING P-CHANNEL POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | UPA2730TP |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING P-CHANNEL POWER MOSFET |
| 中文描述： | 開關(guān)的P -溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 80K |
| 代理商： | UPA2730TP |
Data Sheet G15983EJ1V0DS
2
μ
PA2730TP
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, Unless otherwise noted, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
30 V, V
GS
= 0 V
–
1
μ
A
Gate Leakage Current
I
GSS
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
–
10 V, I
D
=
–
1 mA
m
100
–
2.5
nA
Gate Cut-off Voltage
V
GS(off)
–
1.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
=
–
10 V, I
D
=
–
7.5 A
14
30
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
=
–
10 V, I
D
=
–
7.5 A
5.7
7.0
m
R
DS(on)2
V
GS
=
–
4.5 V, I
D
=
–
7.5 A
7.7
10.5
m
R
DS(on)3
V
GS
=
–
4.0 V, I
D
=
–
7.5 A
8.8
12.0
m
Input Capacitance
C
iss
V
DS
=
–
10 V
4670
pF
Output Capacitance
C
oss
V
GS
= 0 V
1220
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
760
pF
Turn-on Delay Time
t
d(on)
V
DD
=
–
15 V, I
D
=
–
7.5 A
20
ns
Rise Time
t
r
V
GS
=
–
10 V
28
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
190
ns
Fall Time
t
f
110
ns
Total Gate Charge
Q
G
V
DD
=
–
24 V
97
nC
Gate to Source Charge
Q
GS
V
GS
=
–
10 V
10
nC
Gate to Drain Charge
Q
GD
I
D
= 15 A
32
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 15 A, V
GS
= 0 V
0.81
V
Reverse Recovery Time
t
rr
I
F
= 15 A, V
GS
= 0 V
65
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
62
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
=
20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
=
2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS(
)
0
= 1 s
Duty Cycle
≤
1%
τ
τ
GS
Wave Form
DS
Wave Form
V
GS(
)
V
DS(
)
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPA2750GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2751GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2753GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2755GR | SWITCHING N-CHANNEL POWER MOSFET |
| UPA2757GR | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA2730TP-E2-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics 功能描述:Pch -30V -42A 7m@10V 8HSOP Cut Tape |
| UPA2731T1A-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2731UT1A-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| UPA2731UT1A-E1-AY | 功能描述:MOSFET P-CH 30V 8-HVSON RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| UPA2732UT1A-E1-AY | 功能描述:MOSFET LV 8HVSON RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。