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參數(shù)資料
| 型號： | UPA827TF-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
| 中文描述： | 高頻低噪聲放大器NPN硅外延雙晶體管，配有6引腳2 × 2SC5179薄型小微型模具 |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 80K |
| 代理商： | UPA827TF-T1 |
P
PA827TF
6
S PARAMETER Q1
V
CE
= 2 V, I
C
= 3 mA, Z
0
= 50
:
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
.90
.88
.85
.81
.76
.71
.66
.61
.55
.50
.45
.40
.35
.31
.27
.23
.20
.17
.14
.11
.09
.07
.06
.06
.07
.09
.11
.12
.15
.16
e
6.40
e
12.71
e
19.07
e
25.04
e
31.15
e
36.82
e
42.59
e
48.04
e
53.11
e
57.87
e
62.61
e
66.68
e
71.16
e
75.23
e
79.47
e
83.55
e
88.30
e
93.90
e
100.21
e
108.97
e
121.06
e
137.25
e
157.89
178.00
158.31
143.83
135.29
127.09
121.79
118.39
6.38
6.21
6.16
6.00
5.84
5.65
5.49
5.32
5.12
4.92
4.72
4.51
4.31
4.12
3.95
3.76
3.60
3.46
3.31
3.18
3.07
2.96
2.85
2.75
2.66
2.58
2.50
2.42
2.36
2.29
170.12
161.60
153.85
146.67
140.06
134.24
128.01
122.51
116.88
111.77
106.90
102.30
98.20
93.99
90.17
86.77
83.36
80.11
77.09
74.09
71.15
68.42
65.71
63.25
60.75
58.17
55.72
53.36
50.97
48.87
.02
.03
.04
.06
.07
.08
.09
.10
.10
.11
.12
.12
.13
.14
.15
.15
.16
.17
.17
.18
.18
.19
.20
.20
.21
.22
.22
.23
.23
.24
84.82
80.22
76.19
72.09
69.59
66.27
64.30
61.95
60.14
59.19
57.53
56.73
55.55
54.75
53.86
52.84
52.11
51.23
50.32
49.45
48.70
47.94
47.06
46.25
45.49
44.42
43.55
42.64
41.72
40.58
.98
.96
.93
.90
.85
.81
.77
.73
.70
.67
.64
.61
.59
.56
.54
.52
.50
.48
.47
.45
.44
.42
.41
.39
.38
.37
.35
.34
.33
.32
e
5.79
e
11.39
e
16.48
e
21.27
e
25.20
e
29.17
e
32.16
e
35.33
e
37.63
e
39.81
e
42.04
e
43.76
e
45.68
e
47.37
e
49.15
e
50.87
e
52.50
e
54.26
e
55.98
e
57.74
e
59.41
e
61.53
e
63.47
e
65.56
e
64.84
e
70.22
e
72.46
e
75.23
e
77.95
e
80.67
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| UPA827TF | HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPA827TF-T1-A | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| UPA828 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD |
| UPA828TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| UPA828TD-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| UPA828TD-T3-A | 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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