參數(shù)資料
型號: UPA827TF-T1
廠商: NEC Corp.
英文描述: HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
中文描述: 高頻低噪聲放大器NPN硅外延雙晶體管,配有6引腳2 × 2SC5179薄型小微型模具
文件頁數(shù): 7/16頁
文件大?。?/td> 80K
代理商: UPA827TF-T1
P
PA827TF
7
S PARAMETER Q1
V
CE
= 2 V, I
C
= 5 mA, Z
0
= 50
:
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
.10
.20
.30
.40
.50
.60
.70
.80
.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
.84
.81
.75
.69
.63
.56
.49
.43
.38
.33
.28
.24
.21
.17
.14
.11
.09
.06
.04
.03
.03
.04
.06
.08
.10
.11
.13
.15
.17
.19
e
8.61
e
16.87
e
25.06
e
32.53
e
39.52
e
45.81
e
51.34
e
56.32
e
60.38
e
63.94
e
67.30
e
70.15
e
73.75
e
76.50
e
79.92
e
83.85
e
88.68
e
96.14
e
108.25
e
138.49
168.35
135.93
124.72
117.47
113.65
110.21
108.23
105.94
104.37
102.94
9.63
9.22
8.95
8.53
8.10
7.61
7.14
6.69
6.24
5.84
5.45
5.11
4.81
4.53
4.29
4.06
3.86
3.69
3.51
3.37
3.23
3.10
2.98
2.88
2.78
2.69
2.60
2.52
2.44
2.37
167.48
157.02
147.63
139.05
131.27
124.52
117.79
111.95
106.68
102.01
97.74
93.83
90.14
86.78
83.51
80.56
77.71
74.99
72.27
69.75
67.06
64.76
62.16
60.11
57.82
55.62
53.30
51.10
48.98
46.90
.01
.03
.04
.05
.06
.07
.08
.09
.09
.10
.11
.11
.12
.13
.14
.14
.15
.16
.16
.17
.18
.19
.19
.20
.21
.21
.22
.23
.23
.24
83.50
78.74
74.43
70.86
68.32
65.84
64.80
63.52
62.41
61.60
61.00
60.05
59.47
58.72
58.06
57.25
56.63
55.67
54.87
54.06
53.24
52.26
51.32
50.46
49.57
48.40
47.62
46.35
45.44
44.23
.97
.93
.88
.83
.77
.72
.68
.64
.61
.58
.55
.53
.51
.49
.47
.45
.44
.43
.41
.40
.39
.37
.36
.35
.34
.33
.31
.30
.29
.28
e
7.47
e
14.37
e
20.21
e
25.24
e
28.95
e
32.34
e
34.71
e
37.13
e
38.90
e
40.52
e
42.09
e
43.35
e
44.63
e
46.21
e
47.64
e
49.09
e
50.66
e
52.11
e
53.78
e
55.61
e
57.35
e
59.40
e
61.48
e
63.66
e
66.03
e
68.49
e
71.05
e
73.85
e
76.93
e
79.95
相關(guān)PDF資料
PDF描述
UPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
UPA828 HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA828TF-T1 HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA831 NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UPA827TF-T1-A 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA828 制造商:NEC 制造商全稱:NEC 功能描述:HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5184 THIN-TYPE SMALL MINI MOLD
UPA828TC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete
UPA828TD-A 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
UPA828TD-T3-A 功能描述:射頻雙極小信號晶體管 NPN Silicn Amp Oscilltr Dul Trnsist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel