參數(shù)資料
型號: UPD4481361GF-A65
廠商: NEC Corp.
英文描述: 8M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
中文描述: 800萬位ZEROSB SRAM的流動經(jīng)手術(shù)
文件頁數(shù): 17/28頁
文件大?。?/td> 326K
代理商: UPD4481361GF-A65
17
Data Sheet M15561EJ3V0DS
μ
PD4481161, 4481181, 4481321, 4481361
Read and Write Cycle (3.3 V LVTTL Interface)
Parameter
Symbol
-A65
-A75
-A85
Unit
Note
-A65Y
-A75Y
-A85Y
(133 MHz)
(117 MHz)
(100 MHz)
Standard
Alias
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Cycle time
TKHKH
TCYC
7.5
8.6
10
ns
Clock access time
TKHQV
TCD
6.5
7.5
8.5
ns
Output enable access time
TGLQV
TOE
3.5
3.5
3.5
ns
Clock high to output active
TKHQX1
TDC1
2.5
2.5
2.5
ns
1, 2
Clock high to output change
TKHQX2
TDC2
2.5
2.5
2.5
ns
Output enable to output active
TGLQX
TOLZ
0
0
0
ns
1
Output disable to output High-Z
TGHQZ
TOHZ
0
3.5
0
3.5
0
3.5
ns
1
Clock high to output High-Z
TKHQZ
TCZ
2.5
5
2.5
5
2.5
5
ns
1, 2
Clock high pulse width
TKHKL
TCH
2.5
2.5
2.5
ns
Clock low pulse width
TKLKH
TCL
2.5
2.5
2.5
ns
Setup times Address
TAVKH
TAS
1.5
1.5
2
ns
Address advance
TADVVKH
TADVS
Clock enable
TEVKH
TCES
Chip enable
TCVKH
TCSS
Data in
TDVKH
TDS
Write enable
TWVKH
TWS
Hold times
Address
TKHAX
TAH
0.5
0.5
0.5
ns
Address advance
TKHADVX
TADVH
Clock enable
TKHEX
TCEH
Chip enable
TKHCX
TCSH
Data in
TKHDX
TDH
Write enable
TKHWX
TWH
Power down entry time
TZZE
TZZE
7.5
8.6
10
ns
Power down recovery time
TZZR
TZZR
7.5
8.6
10
ns
Notes 1.
Transition is measured
±
200 mV from steady state.
2.
To avoid bus contention, the output buffers are designed such that TKHQZ (device turn-off) is faster than
TKHQX1 (device turn-on) at a given temperature and voltage. The specs as shown do not imply bus
contention because TKHQX1 is a min. parameter that is worse case at totally different conditions (T
A
min.,
V
DD
max.) than TKHQZ, which is a max. parameter (worse case at T
A
max., V
DD
min.).
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