- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376427 > UPD4482321GF-C85 (NEC Corp.) 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION PDF資料下載
參數(shù)資料
| 型號(hào)： | UPD4482321GF-C85 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)存儲(chǔ)器流經(jīng)手術(shù) |
| 文件頁數(shù)： | 10/28頁 |
| 文件大小： | 370K |
| 代理商： | UPD4482321GF-C85 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁當(dāng)前第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁
10
μ
PD4482161, 4482181, 4482321, 4482361
Data Sheet M14521EJ3V0DS
Asynchronous Truth Table
Operation
/G
I/O
Read Cycle
L
Dout
Read Cycle
H
High-Z
Write Cycle
×
High-Z, Din
Deselected
×
High-Z
Remark
×
: don’t care
Synchronous Truth Table
Operation
/CE
CE2
/CE2
/AP
/AC
/ADV
/WRITE
CLK
Address
Deselected
Note
H
×
×
×
L
×
×
L
→
H
None
Deselected
Note
L
L
×
L
×
×
×
L
→
H
None
Deselected
Note
L
×
H
L
×
×
×
L
→
H
None
Deselected
Note
L
L
×
H
L
×
×
L
→
H
None
Deselected
Note
L
×
H
H
L
×
×
L
→
H
None
Read Cycle / Begin Burst
L
H
L
L
×
×
×
L
→
H
External
Read Cycle / Begin Burst
L
H
L
H
L
×
H
L
→
H
External
Read Cycle / Continue Burst
×
×
×
H
H
L
H
L
→
H
Next
Read Cycle / Continue Burst
H
×
×
×
H
L
H
L
→
H
Next
Read Cycle / Suspend Burst
×
×
×
H
H
H
H
L
→
H
Current
Read Cycle / Suspend Burst
H
×
×
×
H
H
H
L
→
H
Current
Write Cycle / Begin Burst
L
H
L
H
L
×
L
L
→
H
External
Write Cycle / Continue Burst
×
×
×
H
H
L
L
L
→
H
Next
Write Cycle / Continue Burst
H
×
×
×
H
L
L
L
→
H
Next
Write Cycle / Suspend Burst
×
×
×
H
H
H
L
L
→
H
Current
Write Cycle / Suspend Burst
H
×
×
×
H
H
L
L
→
H
Current
Note
Deselect status is held until new “Begin Burst” entry.
Remarks1.
×
: don’t care
2.
/WRITE = L means any one or more byte write enables (/BW1, /BW2, /BW3 or /BW4) and /BWE are LOW
or /GW is LOW.
/WRITE = H means the following two cases.
(1) /BWE and /GW are HIGH.
(2) /BW1 to /BW4 and /GW are HIGH, and /BWE is LOW.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD4482161 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-C75 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-C85 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482321 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-A85 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD45128163G5 | 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM |
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。