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參數(shù)資料
| 型號： | UPD4482321GF-C85 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)存儲器流經(jīng)手術(shù) |
| 文件頁數(shù)： | 18/28頁 |
| 文件大?。?/td> | 370K |
| 代理商： | UPD4482321GF-C85 |
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1
μ
P
D
TKHKH
TAVKH
TKHAX
TEVKH
TKHEX
D1(A1)
D1(A2)
D2(A2)
D2(A2)
D3(A2)
D4(A2)
D1(A3)
D2(A3)
D3(A3)
TKHKL
TKLKH
A1
A2
A3
TDVKH
TKHDX
TKHADSX
TWVKH
TKHWX
CLK
/AP
/AC
Address
/ADV
/CEs
Note2
/G
Data In
/BWE
Note1
/BWs
/GW
Note1
Data Out
TADVVKH
TWVKH
TKHADVX
TKHWX
TADSVKH TKHADSX
TADSVKH
WRITE CYCLE
Notes
2.
When /CEs is HIGH, /CE and /CE2 are HIGH and CE2 is LOW.
All bytes WRITE can be initiated by /GW LOW or /GW HIGH and /BWE, /BW1 to /BW4 LOW.
1.
/CEs refers to /CE, CE2 and /CE2. When /CEs is LOW, /CE and /CE2 are LOW and CE2 is HIGH.
TGHQZ
High-Z
High-Z
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD4482161 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-C75 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-C85 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482321 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
| UPD4482161GF-A85 | 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION |
相關(guān)代理商/技術(shù)參數(shù) |
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| UPD45128163G5 | 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM |
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
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