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參數(shù)資料
| 型號： | UPD4483362 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)內(nèi)存256K - Word的36位HSTL接口/寄存器間/晚寫 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大?。?/td> | 94K |
| 代理商： | UPD4483362 |
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2001
MOS INTEGRATED CIRCUIT
μ
PD4483362
8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM
256K-WORD BY 36-BIT
HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
PRELIMINARY DATA SHEET
Document No. M14440EJ1V0DS00 (1st edition)
Date Published April 2001 NS CP(K)
Printed in Japan
Description
The
μ
PD4483362 is a 262,144 words by 36 bits synchronous static RAM fabricated with advanced CMOS
technology using Full-CMOS six-transistor memory cell.
The
μ
PD4483362 is suitable for applications which require synchronous operation, high-speed, low voltage, high-
density memory and wide bit configuration, such as cache and buffer memory.
The
μ
PD4483362 is packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness for high density and
low capacitive loading.
Features
Fully synchronous operation
HSTL Input / Output levels
Fast clock access time : 3.8 ns (133 MHz)
Asynchronous output enable control : /G
Byte write control : /SBa (DQa1-9), /SBb (DQb1-9), /SBc (DQc1-9), /SBd (DQd1-9)
Common I/O using three-state outputs
Internally self-timed write cycle
Late write with 1 dead cycle between Read-Write
3.3 V (Chip) / 1.5 V (I/O) supply
100-pin PLASTIC LQFP package, 14 mm x 20 mm
Sleep Mode : ZZ (Enables sleep mode, active high)
Ordering Information
Part number
Access time
Clock frequency
Package
μ
PD4483362GF-A75
3.8 ns
133 MHz
100-pin PLASTIC LQFP (14 x 20)
相關(guān)PDF資料 |
PDF描述 |
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| UPD4483362GF-A75 | 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| UPD45128163G5-A80 | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128163-E | 128M-bit Synchronous DRAM 4-bank, LVTTL |
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| UPD45128163-I-E | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| UPD45128163G5 | 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM |
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
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