- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379498 > UPD4483362 (NEC Corp.) 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE PDF資料下載
參數(shù)資料
| 型號： | UPD4483362 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)內(nèi)存256K - Word的36位HSTL接口/寄存器間/晚寫 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 94K |
| 代理商： | UPD4483362 |
3
μ
PD4483362
Preliminary Data Sheet M14440EJ1V0DS
Pin Name and Functions
Pin name
Pin No.
Description
SA0 to SA17
37, 36, 35, 34, 33, 32, 100, 99, 82, 81, 44,
Synchronous Address Input
45, 46, 47, 48, 49, 50, 83
DQa1 to DQa9
63, 62, 59, 58, 57, 56, 53, 52, 51
Synchronous Data Input / Output
DQb1 to DQb9
68, 69, 72, 73, 74, 75, 78, 79, 80
DQc1 to DQc9
13, 12, 9, 8, 7, 6, 3, 2, 1
DQd1 to DQd9
18, 19, 22, 23, 24, 25, 28, 29, 30
/SS
98
Synchronous Chip Select
/SW
85
Synchronous Byte Write Enable
/SBa
Note1
93
Synchronous Byte "a" Write Enable
/SBb
Note1
95
Synchronous Byte "b" Write Enable
/SBc
Note1
96
Synchronous Byte "c" Write Enable
/SBd
Note1
97
Synchronous Byte "d" Write Enable
/G
86
Asynchronous Output Enable
ZZ
Note2
64
Asynchronous Sleep Mode
K, /K
89, 88
Main Clock Input
V
DD
15, 41, 65, 91
Core Power Supply
V
SS
17, 40, 67, 90
Ground
V
DD
Q
4, 11, 20, 27, 54, 61, 70, 77
Output Buffer Power Supply
V
SS
Q
5, 10, 21, 26, 55, 60, 71, 76
Output Buffer Ground
V
REF
38, 43, 87
Input Reference
NC
14, 16, 31, 39, 42, 66, 84, 92, 94
No Connection
Notes 1.
If Byte Write Operation is not used, Byte Write Pins (/SBa, /SBb, /SBc, /SBd) are to be tied to V
SS
.
2.
If Sleep Mode is not used, ZZ Pin is to be tied to V
SS
.
Remark
This device only supports Single Differential Clock, R / R Mode.
(R / R stands for Registered Input / Registered Output.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD4483362GF-A75 | 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| UPD45128163G5-A80 | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128163-E | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128163-I | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
| UPD45128163-I-E | 128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD45128163G5 | 制造商:Renesas Electronics Corporation 功能描述:128 MBIT SDRAM |
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。