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參數(shù)資料
| 型號(hào)： | UPD4483362 |
| 廠商： | NEC Corp. |
| 英文描述： | 8M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 256K-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE |
| 中文描述： | 800萬位CMOS同步快速靜態(tài)內(nèi)存256K - Word的36位HSTL接口/寄存器間/晚寫 |
| 文件頁數(shù)： | 7/16頁 |
| 文件大小： | 94K |
| 代理商： | UPD4483362 |
7
μ
PD4483362
Preliminary Data Sheet M14440EJ1V0DS
DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Input leakage current
I
LI
V
IN
= 0 to V
DD
–5
+5
μ
A
DQ leakage current
I
LO
V
I/O
= 0 to V
DD
Q
–5
+5
μ
A
Operating supply current
I
DD
V
IN
= V
IH
or V
IL
, /SS = V
IL
, ZZ = V
IL
,
350
mA
Cycle = MAX., I
DQ
= 0 mA
Sleep mode power supply current
I
SBZZ
ZZ = V
IH
, All other inputs = V
IH
or V
IL
,
20
mA
Cycle = DC, I
DQ
= 0 mA
Output Voltage on Push-Pull Output Buffer Mode
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Low level output voltage
V
OL
I
OL
= +2 mA
–
0.3
V
High level output voltage
V
OH
I
OH
= –2 mA
V
DD
Q–0.3
–
V
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