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參數(shù)資料
| 型號： | UPD45128163G5-A10B |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| 中文描述： | 128兆位同步DRAM 4銀行，LVTTL |
| 文件頁數(shù)： | 21/92頁 |
| 文件大?。?/td> | 1107K |
| 代理商： | UPD45128163G5-A10B |
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Data Sheet M12650EJBV0DS00
21
μ
PD45128441, 45128841, 45128163
6. Programming the Mode Register
The mode register is programmed by the Mode register set command using address bits A11 through A0, BA0(A13)
and BA1(A12) as data inputs. The register retains data until it is reprogrammed or the device loses power.
The mode register has four fields;
Options
/CAS latency : A6 through A4
Wrap type
: A3
Burst length
: A2 through A0
: A11 through A7, BA0(A13), BA1(A12)
Following mode register programming, no command can be issued before at least 2 CLK have elapsed.
/CAS Latency
/CAS latency is the most critical of the parameters being set. It tells the device how many clocks must elapse
before the data will be available.
The value is determined by the frequency of the clock and the speed grade of the device.
13.3 Relationship
between Frequency and Latency
shows the relationship of /CAS latency to the clock period and the speed grade of
the device.
Burst Length
Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is
completed, the output bus will become Hi-Z.
The burst length is programmable as 1, 2, 4, 8 or full page.
Wrap Type (Burst Sequence)
The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either
“Sequential” or “Interleave”. The method chosen will depend on the type of CPU in the system.
Some microprocessor cache systems are optimized for sequential addressing and others for interleaved
addressing.
7.1 Burst Length and Sequence
shows the addressing sequence for each burst length using them.
Both sequences support bursts of 1, 2, 4 and 8. Additionally, sequence supports the full page length.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UPD45128163G5-A10B-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128163G5-A75 | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128163G5-A75-9JF | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128441G5-A10B | 128M-bit Synchronous DRAM 4-bank, LVTTL |
| UPD45128841G5-A10B | 128M-bit Synchronous DRAM 4-bank, LVTTL |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UPD45128163G5-A75-9JF | 制造商:Elpida Memory Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 |
| UPD45128841G5-A75-9JF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 16M x 8, 54 Pin, Plastic, TSOP |
| UPD4516161AG5A109NF | 制造商:NEC Electronics Corporation 功能描述: |
| UPD4516161AG5-A10-9NF | 制造商:NEC Electronics Corporation 功能描述:SDRAM, 1M x 16, 50 Pin, Plastic, TSOP |
| UPD4528BC | 制造商:Panasonic Industrial Company 功能描述:IC |
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