參數(shù)資料
型號(hào): UPD46128512-E10X
廠商: NEC Corp.
英文描述: 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
中文描述: 128兆位CMOS移動(dòng)指明內(nèi)存800萬字由16位溫度范圍
文件頁數(shù): 66/82頁
文件大小: 817K
代理商: UPD46128512-E10X
Preliminary Data Sheet M17507EJ2V0DS
66
μ
PD46128512-X
Figure 8-9. Synchronous Burst Write Cycle Timing Chart (/WE Single Clock Control)
T0
T1
T2
T3
T4
T5
Tl
Tm
Tn
T0
T1
CLK (Input)
/ADV (Input)
Address (Input)
/CE1 (Input)
/WAIT (Output)
/OE (Input)
DQ (Input)
/LB, /UB (Input)
/WE (Input)
t
CH
t
CL
D0
t
ACS
t
WDS
t
WDH
t
CEWA
t
CEWA
t
BC
t
WES
t
CLWA
t
CSV
t
CES
t
VPL
t
ACS
t
CSV
t
VPL
t
ACH
t
ACH
t
CHV
t
AH
t
CHV
t
AH
RL = 5
t
CHV
t
CHV
t
WRB
t
LUH
t
WEH
t
WES
t
WEH
t
CEH
t
CEH
t
CES
t
CYCLE
D1
D
BL
High-Z
High-Z
H
Valid
High-Z
High-Z
Valid
t
CWHZ
Remarks 1.
The above timing chart assumes Read Latency is 5 and Burst Length is 8 or 16.
D
BL
means the latest data input of burst length.
2.
CE2 should be fixed HIGH.
3.
Valid clock edge is the rising edge.
4. t
BC
is defined from CLK rising edge of RL
1 to /LB and /UB = LOW.
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