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參數(shù)資料
| 型號(hào)： | UPD46128512-E11X |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 128兆位CMOS移動(dòng)指明內(nèi)存800萬字由16位溫度范圍 |
| 文件頁(yè)數(shù)： | 18/82頁(yè) |
| 文件大?。?/td> | 817K |
| 代理商： | UPD46128512-E11X |
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Preliminary Data Sheet M17507EJ2V0DS
18
μ
PD46128512-X
4.6 Burst Read Suspend/Resume
A burst read operation can be suspended by bringing /OE signal from LOW to HIGH during the burst read operation.
The /OE signal must be required to meet the specified setup / hold time to the clock which the data being suspended.
Once the /OE is brought to HIGH, output data turns to be high impedance state after specific time duration.
The burst read suspend will be effective after outputting first read data, or after outputting dummy wait cycles in case of
dummy wait cycling insertion at continuous burst read mode.
The burst suspend mode will be resumed by re-asserting /OE to LOW, and the first output data is from the same
address location as of being suspended.
Figure 4-3. Burst Read Suspend/Resume
CLK (Input)
/ADV (Input)
/OE (Input)
A0 to A22 (Input)
/CE1 (Input)
DQ0 to DQ15 (Output)
H
t
SOEH
t
SOES
t
SOP
t
SOEH
t
SOES
t
OHZ
L
High-Z
Q0
Q1
Q2
Q3
t
BDH
t
BACC
t
BDH
t
BACC
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