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參數(shù)資料
| 型號： | UPD46128512-E9X |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-BIT CMOS MOBILE SPECIFIED RAM 8M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 128兆位CMOS移動指明內(nèi)存800萬字由16位溫度范圍 |
| 文件頁數(shù)： | 14/82頁 |
| 文件大?。?/td> | 817K |
| 代理商： | UPD46128512-E9X |
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Preliminary Data Sheet M17507EJ2V0DS
14
μ
PD46128512-X
3. Page Read Operation
For the timing charts, refer to
Figure 7-10. Asynchronous Page Read Cycle Timing Chart
.
3.1 Features of Page Read Operation
Features
Item
Page length
16 words
Page read-corresponding addresses
A3, A2, A1, A0
Page read start address
Don’t care
Page direction
Don’t care
Interrupt during page read operation
Enabled
Note
Note
/CE1 = HIGH, or any change in address A4 or higher will initiate a new read access specified as t
AA
or t
ACE
.
3.2 Page Length
16 words is supported as the page lengths. Page length is not necessary to set through Mode Register.
3.3 Page-Corresponding Addresses
The 16 words page read-enabled addresses are A3, A2, A1, and A0. Fix addresses other than A3, A2, A1, and A0
during page read operation.
3.4 Page Start Address
Since random page read is supported, any address (A3, A2, A1 and A0 with the 16 words page) can be used as the
page read start address.
3.5 Page Direction
Since random page read is possible, there is not restriction on the page direction.
3.6 Interrupt during Page Read Operation
When generating an interrupt during page read, make /CE1 HIGH or change A4 and higher addresses.
3.7 When Page Read is not Used
Since random page read is supported, even when not using page read, random access is possible as usual.
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