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參數(shù)資料
| 型號： | UPD780021AY |
| 廠商： | NEC Corp. |
| 元件分類： | 8位微控制器 |
| 英文描述： | 8-BIT SINGLE-CHIP MICROCONTROLLERS |
| 中文描述： | 8位單晶片微控制器 |
| 文件頁數(shù)： | 45/90頁 |
| 文件大小： | 660K |
| 代理商： | UPD780021AY |
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μ
PD78F0034B, 78F0034BY, 78F0034B(A), 78F0034BY(A)
45
Data Sheet U16369EJ1V0DS
Flash Memory Programming Characteristics (T
A
= +10 to +40
°
C, V
DD
= 1.8 to 5.5 V, V
SS
= AV
SS
= 0 V)
(1) Write erase characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Operating frequency
f
X
4.5 V
≤
V
DD
≤
5.5 V
1.0
10.0
MHz
3.0 V
≤
V
DD
< 4.5 V
1.0
8.38
MHz
1.8 V
≤
V
DD
< 3.0 V
1.0
1.25
MHz
V
PP
supply voltage
V
PP2
During flash memory programming
9.7
10.0
10.3
V
V
DD
supply current
I
DD
When
V
PP
= V
PP2
oscillation
10 MHz crystal
V
DD
= 5.0 V
±
10%
30
mA
operating mode
8.38 MHz crystal
V
DD
= 5.0 V
±
10%
oscillation
V
DD
= 3.0 V
±
10%
operating mode
24
mA
17
mA
V
PP
supply current
I
PP
When V
PP
= V
PP2
100
mA
Step erase time
Note 1
T
er
0.199
0.2
0.201
s
Overall erase time
Note 2
T
era
When step erase time = 0.2 s
20
s/chip
Writeback time
Note 3
T
wb
49.4
50
50.6
ms
Number of writebacks per
writeback command
Note 4
C
wb
When writeback time = 50 ms
60
Times
Number of erases/writebacks
C
erwb
16
Times
Step write time
Note 5
T
wr
48
50
52
μ
s
Overall write time per word
Note 6
T
wrw
When step write time = 50
μ
s (1 word = 1 byte)
48
520
μ
s
Number of rewrites per chip
Note 7
C
erwb
1 erase + 1 write after erase = 1 rewrite
20
Times
Notes 1.
The recommended setting value of the step erase time is 0.2 s.
2.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
3.
The recommended setting value of the writeback time is 50 ms.
4.
Writeback is executed once by the issuance of the writeback command. Therefore, the number of retries
must be the maximum value minus the number of commands issued.
5.
The recommended setting value of the step write time is 50
μ
s.
6.
The actual write time per word is 100
μ
s longer. The internal verify time during or after a write is not
included.
7.
When a product is first written after shipment, "erase
→
write" and "write only" are both taken as one
rewrite.
Example:
P: Write, E: Erase
Shipped product
→
P
→
E
→
P
→
E
→
P: 3 rewrites
Shipped product
→
E
→
P
→
E
→
P
→
E
→
P: 3 rewrites
(2) Serial write operation characteristics
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
PP
set time
t
PSRON
V
PP
high voltage
1.0
μ
s
Set time from V
DD
↑
to V
PP
↑
t
DRPSR
V
PP
high voltage
10
μ
s
Set time from V
PP
↑
to RESET
↑
t
PSRRF
V
PP
high voltage
1.0
μ
s
V
PP
count start time from RESET
↑
t
RFCF
1.0
μ
s
Count execution time
t
COUNT
2.0
ms
V
PP
counter high-level width
t
CH
8.0
μ
s
V
PP
counter low-level width
t
CL
8.0
μ
s
V
PP
counter noise elimination width
t
NFW
40
ns
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