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UTRON
UT6164C
Rev. 1.1
8K X 8 BIT HIGH SPEED CMOS SRAM
UTRON TECHNOLOGY INC.
P80074
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
3
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to Vss
VTERM
-0.5 to +6.5
V
Operating Temperature
TA
0 to +70
J
Storage Temperature
TSTG
-65 to +150
J
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
Tsolder
260
J
*Stress greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may
affect device reliability.
TRUTH TABLE
MODE
1
CE
CE2
OE
WE
I/O OPERATION
SUPPLY CURRENT
Standby
H
X
High - Z
ISB
,ISB1
Standby
X
L
X
High - Z
ISB
,ISB1
Output Disable
L
H
High - Z
ICC
Read
L
H
L
H
DOUT
ICC
Write
L
H
X
L
DIN
ICC
Note: H = VIH, L=VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS (V
CC = 5V
10%, T
A = 0Jto 70J)
PARAMETER
SYMBOL TEST CONDITION
MIN.
MAX.
UNIT
Input High Voltage
VIH
2.2
VCC+0.5
V
Input Low Voltage
VIL
- 0.5
0.8
V
Input Leakage Current
ILI
VSS VIN VCC
- 1
1
A
Output Leakage Current
ILO
VSS VI/O VCC
1
CE =VIH or CE2=VIL or
OE =VIH or WE =VIL
- 1
1
A
Output High Voltage
VOH
IOH = - 4mA
2.4
-
V
Output Low Voltage
VOL
IOL = 8mA
-
0.4
V
- 10
-
180
mA
- 12
-
160
mA
Operating Power
Supply Current
ICC
Cycle time=Min.
1
CE = VIL , CE2= VIH
II/O
= 0mA
- 15
-
140
mA
Standby Current (TTL)
ISB
1
CE = VIH or CE2= VIL
-
30
mA
Standby Current (CMOS) ISB1
1
CE VCC-0.2V or CE2 0.2V
-
5
mA
Notes:
1. Overshoot : Vcc+2.0v for pulse width less than 8ns.
2. Undershoot : Vss-2.0v for pulse width less than 8ns.
3. Overshoot and Undershoot are sampled, not 100% tested.