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參數(shù)資料
| 型號： | V53C16129H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 128K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 128K的高性能× 16位快速頁面模式的CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 223K |
| 代理商： | V53C16129H |
MOSEL VITELIC
V53C16129H
5
V53C16129H Rev. 1.2 July 1997
AC Characteristics
T
A
= 0
°
C to 70
AC Test conditions, input pulse levels 0 to 3V
°
C, V
CC
= 5 V
±
10%, V
SS
= 0V unless otherwise noted
#
Symbol
Parameter
40
45
50
60
Unit
Notes
Min. Max. Min. Max. Min.
Max.
Min. Max.
1
t
RAS
RAS Pulse Width
40
75K
45
75K
50
75K
60
75K
ns
2
t
RC
Read or Write Cycle Time
75
80
90
110
ns
3
t
RP
RAS Precharge Time
25
25
30
40
ns
4
t
CSH
CAS Hold Time
40
45
50
60
ns
5
t
CAS
CAS Pulse Width
7
8
9
15
ns
6
t
RCD
RAS to CAS Delay
17
28
18
32
19
36
20
45
ns
7
t
RCS
Read Command Setup Time
0
0
0
0
ns
4
8
t
ASR
Row Address Setup Time
0
0
0
0
ns
9
t
RAH
Row Address Hold Time
7
8
9
10
ns
10
t
ASC
Column Address Setup Time
0
0
0
0
ns
11
t
CAH
Column Address Hold Time
5
6
7
10
ns
12
t
RSH (R)
RAS Hold Time (Read Cycle)
10
10
10
15
ns
13
t
CRP
CAS to RAS Precharge Time
5
5
5
5
ns
14
t
RCH
Read Command Hold Time Referenced to
CAS
0
0
0
0
ns
5
15
t
RRH
Read Command Hold Time Referenced to
RAS
0
0
0
0
ns
5
16
t
ROH
RAS Hold Time Referenced to OE
8
9
10
10
ns
17
t
OAC
Access Time from OE
12
13
14
14
ns
12
18
t
CAC
Access Time from CAS
12
13
14
14
ns
6,7,14
19
t
RAC
Access Time from RAS
40
45
50
50
ns
6, 8, 9
20
t
CAA
Access Time from Column Address
20
22
24
24
ns
6,7,10
21
t
LZ
OE or CAS to Low-Z Output
0
0
0
0
ns
16
22
t
HZ
OE or CAS to High-Z Output
0
6
0
7
0
8
0
8
ns
16
23
t
AR
Column Address Hold Time from RAS
30
35
40
50
ns
24
t
RAD
RAS to Column Address Delay Time
12
20
13
23
14
26
15
30
ns
11
25
t
RSH (W)
RAS or CAS Hold Time in Write Cycle
10
10
10
15
ns
26
t
CWL
Write Command to CAS Lead Time
12
13
14
15
ns
27
t
WCS
Write Command Setup Time
0
0
0
0
ns
12, 13
28
t
WCH
Write Command Hold Time
5
6
7
10
ns
29
t
WP
Write Pulse Width
5
6
7
10
ns
30
t
WCR
Write Command Hold Time from RAS
30
35
40
50
ns
31
t
RWL
Write Command to RAS Lead Time
12
13
14
15
ns
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