參數(shù)資料
型號(hào): V53C16256
廠商: Mosel Vitelic, Corp.
英文描述: 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
中文描述: 256K × 16快速頁面模式的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁數(shù): 4/19頁
文件大?。?/td> 146K
代理商: V53C16256
4
V53C16256H Rev. 2.3 June 1998
MOSEL V ITELIC
V53C16256H
DC and Operating Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
(1-2)
= 0 V, unless otherwise specified.
= 5V
±
5%, V
SS
Symbol
Parameter
Access
Time
V53C16256H
Unit
Test Conditions
Notes
Min.
Typ.
Max.
I
LI
Input Leakage Current
(any input pin)
–10
10
m
A
V
SS
V
IN
V
CC
I
LO
Output Leakage Current
(for High-Z State)
–10
10
m
A
V
RAS, CAS at V
SS
V
OUT
V
CC
IH
I
CC1
V
Operating
CC
Supply Current,
30
200
mA
t
RC
= t
RC
(min.)
1, 2
35
190
40
180
45
170
50
160
60
150
I
CC2
V
TTL Standby
CC
Supply Current,
2
mA
RAS, CAS at V
other inputs
IH
3
V
SS
I
CC3
V
RAS-Only Refresh
CC
Supply Current,
30
200
mA
t
RC
= t
RC
(min.)
2
35
190
40
180
45
170
50
160
60
150
I
CC4
V
Fast Page Mode Operation
CC
Supply Current,
30
190
mA
Minimum Cycle
1, 2
35
180
40
170
45
160
50
150
60
140
I
CC5
V
Standby, Output Enabled
other inputs
3
CC
Supply Current,
V
SS
2
mA
RAS = V
IH
, CAS = V
IL
1
I
CC6
V
CMOS Standby
CC
Supply Current,
1
mA
RAS
CAS
All other inputs
3
3
V
V
CC
– 0.2 V,
– 0.2 V,
CC
3
V
SS
V
IL
Input Low Voltage
–1
0.8
V
3
V
IH
Input High Voltage
2.0
V
CC
+ 1
V
3
V
OL
Output Low Voltage
0.4
V
I
OL
= 2.0 mA
V
OH
Output High Voltage
2.4
V
I
OH
= –2.0 mA
相關(guān)PDF資料
PDF描述
V53C16256H 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
V53C16256SH 256K X 16 FAST PAGE MODE CMOS DYNAMIC RAM WITH SELF REFRESH
V53C16258H HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
V53C16258L HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
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