參數(shù)資料
型號: V53C16258H
廠商: Mosel Vitelic, Corp.
英文描述: HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
中文描述: 高性能256 × 16 EDO公司頁面模式的CMOS動態(tài)隨機存儲器可選自刷新
文件頁數(shù): 6/20頁
文件大?。?/td> 556K
代理商: V53C16258H
6
V53C16258H Rev. 3.8 November 1999
MOSEL V ITELIC
V53C16258H
29
t
WP
Write Pulse Width
4
5
5
5
6
7
ns
30
t
WCR
Write Command Hold Time from
RAS
19
23
25
30
35
40
ns
31
t
RWL
Write Command to RAS Lead
Time
7
9
10
10
13
14
ns
32
t
DS
Data in Setup Time
0
0
0
0
0
0
ns
14
33
t
DH
Data in Hold Time
4
5
5
5
6
7
ns
14
34
t
WOH
Write to OE Hold Time
5
5
5
6
7
8
ns
14
35
t
OED
OE to Data Delay Time
5
5
5
6
7
8
ns
14
36
t
RWC
Read-Modify-Write Cycle Time
67
79
90
95
115
130
ns
37
t
RRW
Read-Modify-Write Cycle RAS
Pulse Width
46
53
59
64
80
87
ns
38
t
CWD
CAS to WE Delay
19
21
23
25
32
34
ns
12
39
t
RWD
RAS to WE Delay in Read-
Modify-Write Cycle
36
41
46
51
62
68
ns
12
40
t
CRW
CAS Pulse Width (RMW)
27
31
34
38
50
52
ns
41
t
AWD
Col. Address to WE Delay
24
27
29
31
41
42
ns
12
42
t
PC
EDO Fast Page Mode Read or
Write Cycle Time
10
12
14
15
17
19
ns
43
t
CP
CAS Precharge Time
3
3
4
5
6
7
ns
44
t
CAR
Column Address to RAS Setup
Time
13
16
18
20
22
24
ns
45
t
CAP
Access Time from Column
Precharge
15
18
20
22
25
27
ns
7
46
t
DHR
Data in Hold Time Referenced
to RAS
19
23
25
30
35
40
ns
47
t
CSR
CAS Setup Time CAS-before-
RAS Refresh
5
7
8
10
10
10
ns
48
t
RPC
RAS to CAS Precharge Time
0
0
0
0
0
0
ns
49
t
CHR
CAS Hold Time CAS-before-
RAS Refresh
6
7
8
8
10
10
ns
50
t
PCM
EDO Page Mode
Read-Modify-Write Cycle Time
35
40
43
47
65
70
ns
51
t
COH
Output Hold After CAS Low
4
5
5
5
5
5
ns
52
t
OES
OE Low to CAS High Setup
Time
3
3
3
3
5
5
ns
53
t
OEH
OE Hold Time from WE during
Read-Modify Write Cycle
5
5
5
5
10
10
ns
#
Symbol
Parameter
25
(100 MHz)
30
35
40
45
50
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
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