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參數(shù)資料
| 型號： | V53C16258H |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| 中文描述： | 高性能256 × 16 EDO公司頁面模式的CMOS動態(tài)隨機存儲器可選自刷新 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大小： | 556K |
| 代理商： | V53C16258H |
7
MOSEL V ITELIC
V53C16258H
V53C16258H Rev. 3.8 November 1999
Notes:
1. I
CC
is dependent on output loading when the device output is selected. Specified I
CC
(max.) is measured with the
output open.
2.
I
CC
is dependent upon the number of address transitions. Specified I
CC
(max.) is measured with a maximum of two
transitions per address cycle in EDO Page Mode.
3. Specified V
IL
(min.) is steady state operating. During transitions, V
IL
(min.) may undershoot to –1.0 V for a period
not to exceed 20 ns. All AC parameters are measured with V
IL
(min.)
≥
V
SS
and V
IH
(max.)
≤
V
CC
.
4. t
RCD
(max.) is specified for reference only. Operation within t
RCD
(max.) limits insures that t
RAC
(max.) and t
CAA
(max.) can be met. If t
RCD
is greater than the specified t
RCD
(max.), the access time is controlled by t
CAA
and t
CAC
.
5.
Either t
RRH
or t
RCH
must be satisified for a Read Cycle to occur.
6.
Measured with a load equivalent to one TTL input and 50 pF.
7.
Access time is determined by the longest of t
CAA
, t
CAC
and t
CAP
.
Assumes that t
RAD
≤
t
RAD
(max.). If t
RAD
is greater than t
RAD
(max.), t
RAC
will increase by the amount that t
RAD
exceeds t
RAD
(max.).
Assumes that t
RCD
≤
t
RCD
(max.). If t
RCD
is greater than t
RCD
(max.), t
RAC
will increase by the amount that t
RCD
exceeds t
RCD
(max.).
Assumes that t
RAD
≥
t
RAD
(max.).
Operation within the t
RAD
(max.) limit ensures that t
RAC
(max.) can be met. t
RAD
(max.) is specified as a reference
point only. If t
RAD
is greater than the specified t
RAD
(max.) limit, the access time is controlled by t
CAA
and t
CAC
.
t
WCS
, t
RWD
, t
AWD
and t
CWD
are not restrictive operating parameters.
t
WCS
(min.) must be satisfied in an Early Write Cycle.
t
DS
and t
DH
are referenced to the latter occurrence of CAS or WE.
t
T
is measured between V
IH
(min.) and V
IL
(max.). AC-measurements assume t
T
= 3 ns.
Assumes a three-state test load (5 pF and a 500 Ohm Thevenin equivalent).
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
An initial 200
μ
s pause and 8 RAS-containing cycles are required when exiting an extended period of bias without
clocks. An extended period of time without clocks is defined as one that exceeds the specified Refresh Interval.
18.
One CBR refresh or complete set of row refreah cycles must be completed upon exiting Self Refreah Mode.
54
t
OEP
OE High Pulse Width
4
5
8
10
10
10
ns
55
t
T
Transition Time (Rise and Fall)
1.5
50
1.5
50
1.5
50
1.5
50
1.5
50
1.5
50
ns
15
56
t
REF
Refresh Interval (512 Cycles)
8
8
8
8
8
8
ms
17
Optional Self Refresh
57
t
RASS
RAS Pulse Width During Self
Refresh
100
100
100
100
100
100
μ
s
18
58
t
RPS
RAS Precharge Time During
Self Refresh
100
100
100
100
100
100
ns
18
59
t
CHS
CAS Hold Time Width During
Self Refresh
100
100
100
100
100
100
ns
18
60
t
CHD
CAS Low Time During Self
Refresh
100
100
100
100
100
100
μ
s
18
#
Symbol
Parameter
25
(100 MHz)
30
35
40
45
50
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
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| V53C16258HK25 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
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| V53C16258HK35 | 制造商:MOSEL 功能描述:New 制造商:Mosel Vitelic Corporation 功能描述: 制造商:Vitesse Semiconductor Corporation 功能描述: |
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| V53C16258HK45 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
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