- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359323 > V53C16258L (Mosel Vitelic, Corp.) HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH PDF資料下載
參數(shù)資料
| 型號： | V53C16258L |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| 中文描述： | 高性能3.3伏256 × 16 EDO公司頁面模式的CMOS動態(tài)隨機存儲器可選自刷新 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 154K |
| 代理商： | V53C16258L |
6
V53C16258L Rev. 1.1 June 1999
MOSEL VITELIC
V53C16258L
33
t
DH
Data in Hold Time
5
5
6
7
ns
14
34
t
WOH
Write to OE Hold Time
5
6
7
8
ns
14
35
t
OED
OE to Data Delay Time
5
6
7
8
ns
14
36
t
RWC
Read-Modify-Write Cycle Time
90
110
115
130
ns
37
t
RRW
Read-Modify-Write Cycle RAS Pulse
Width
59
75
80
87
ns
38
t
CWD
CAS to WE Delay
23
30
32
34
ns
12
39
t
RWD
RAS to WE Delay in Read-
Modify-Write Cycle
46
58
62
68
ns
12
40
t
CRW
CAS Pulse Width (RMW)
34
48
50
52
ns
41
t
AWD
Col. Address to WE Delay
29
38
41
42
ns
12
42
t
PC
EDO Page Mode Read or Write Cycle
Time
14
15
17
19
ns
43
t
CP
CAS Precharge Time
4
5
6
7
ns
44
t
CAR
Column Address to RAS Setup Time
18
20
22
24
ns
45
t
CAP
Access Time from Column Precharge
20
23
25
27
ns
7
46
t
DHR
Data in Hold Time Referenced to RAS
25
30
35
40
ns
47
t
CSR
CAS Setup Time CAS-before-RAS
Refresh
8
10
10
10
ns
48
t
RPC
RAS to CAS Precharge Time
0
0
0
0
ns
49
t
CHR
CAS Hold Time CAS-before-RAS Refresh
8
10
10
10
ns
50
t
PCM
EDO Page Mode Read-Modify-Write
Cycle Time
43
60
65
70
ns
51
t
COH
Output Hold After CAS Low
3
5
5
5
ns
52
t
OES
OE Low to CAS High Setup Time
3
5
5
5
ns
53
t
OEH
OE Hold Time from WE during
Read-Modify Write Cycle
5
10
10
10
ns
54
t
OEP
OE High Pulse Width
8
10
10
10
ns
55
t
T
Transition Time (Rise and Fall)
1.5
50
1.5
50
1.5
50
1.5
50
ns
15
Optional Self Refresh
56
t
REF
Refresh Interval (512 Cycles)
8
8
8
8
ms
17
57
t
RASS
RAS Pulse Width During Self Refresh
100
100
100
100
μ
s
18
58
t
RPS
RAS Precharge Time During Self Refresh
100
100
100
100
μ
s
18
59
t
CHS
CAS Hold Time Width During Self Refresh
100
100
100
100
μ
s
18
60
t
CHD
CAS Low Time During Self Refresh
100
100
100
100
μ
s
18
#
Symbol
Parameter
35
40
45
50
Unit Notes
Min. Max. Min. Max. Min. Max. Min. Max.
AC Characteristics
(Cont’d)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| V53C1664H | HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM |
| V53C1668H | High Performance 64K X 16 Bit EDO Page Mode Dual CAS CMOS Dynamic RAM(高性能64Kx16EDO頁面模式雙CAS輸入CMOS動態(tài)RAM) |
| V53C316405AK50 | DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| V53C316405AK60 | DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| V53C316405AT50 | DRAM|EDO|4MX4|CMOS|TSOP|26PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| V53C16258LK35 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| V53C16258LK40 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| V53C16258LK45 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| V53C16258LK50 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
| V53C16258LT35 | 制造商:MOSEL 制造商全稱:MOSEL 功能描述:HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。