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參數(shù)資料
| 型號(hào)： | V53C318165A60 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 3.3伏100萬× 16 EDO公司頁面模式的CMOS動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 5/18頁 |
| 文件大?。?/td> | 266K |
| 代理商： | V53C318165A60 |
5
V53C318165A Rev. 1.0 January 1998
MOSEL VITELIC
V53C318165A
AC Characteristics
T
A
= 0
°
C to 70
°
C, V
CC
= 3.3 V
±
0.3 V, V
SS
= 0V, t
T
= 2ns unless otherwise noted
#
JEDEC
Symbol Symbol
Parameter
50
60
70
Unit
Notes
Min. Max. Min. Max. Min. Max.
1
t
RL1RH1
t
RAS
RAS Pulse Width
50
10K
60
10K
70
10K
ns
2
t
RL2RL2
t
RC
Read or Write Cycle Time
84
104
124
ns
3
t
RH2RL2
t
RP
RAS Precharge Time
30
40
50
ns
4
t
RL1CH1
t
CSH
CAS Hold Time
40
50
60
ns
5
t
CL1CH1
t
CAS
CAS Pulse Width
8
10K
10
10K
12
10K
ns
6
t
RL1CL1
t
RCD
RAS to CAS Delay
12
37
14
45
14
53
ns
7
t
WH2CL2
t
RCS
Read Command Setup Time
0
0
0
ns
8
t
AVRL2
t
ASR
Row Address Setup Time
0
0
0
ns
9
t
RL1AX
t
RAH
Row Address Hold Time
8
10
10
ns
10
t
AVCL2
t
ASC
Column Address Setup Time
0
0
0
ns
11
t
CL1AX
t
CAH
Column Address Hold Time
8
10
12
ns
12
t
CL1RH1(R)
t
RSH
RAS Hold Time
13
15
17
ns
13
t
CH2RL2
t
CRP
CAS to RAS Precharge Time
5
5
5
ns
14
t
CH2WX
t
RCH
Read Command Hold Time
Referenced to CAS
0
0
0
ns
9
15
t
RH2WX
t
RRH
Read Command Hold Time
Referenced to RAS
0
0
0
ns
9
16
t
CL1
t
COH
Output Hold after CAS LOW
5
5
5
ns
17
t
GL1QV
t
OAC
Access Time from OE
13
15
17
ns
18
t
CL1QV
t
CAC
Access Time from CAS
13
15
17
ns
7, 12
19
t
RL1QV
t
RAC
Access Time from RAS
50
60
70
ns
7, 12
20
t
AVQV
t
CAA
Access Time from Column Address
25
30
35
ns
7, 13
21
t
CL1QX
t
CLZ
CAS to Low-Z Output
0
0
0
ns
7
22
t
CH2QX
t
OFF
Output Buffer Turnoff Delay
0
13
0
15
0
17
ns
23
t
CL1QZ
t
DZC
Data to CAS Low Delay
0
0
0
ns
15
24
t
RL1AV
t
RAD
RAS to Column Address Delay Time
10
25
12
30
12
35
ns
25
t
GL2QZ
t
OEZ
Output Buffer Turnoff Delay from OE
0
13
0
15
0
17
ns
8
26
t
WL1CH1
t
CWL
Write Command to CAS Lead Time
13
15
17
ns
27
t
WL1CL2
t
WCS
Write Command Setup Time
0
0
0
ns
11
28
t
CL1WH1
t
WCH
Write Command Hold Time
8
10
10
ns
29
t
WL1WH1
t
WP
Write Pulse Width
8
10
10
ns
30
t
GL1QZ
t
DEO
Data to OE Delay
0
0
0
ns
15
31
t
WL1RH1
t
RWL
Write Command to RAS Lead Time
13
15
17
ns
32
t
DVWL2
t
DS
Data in Setup Time
0
0
0
ns
10
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