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參數(shù)資料
| 型號： | V53C364805A |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 3.3 Volt 8M X 8 EDO Page Mode CMOS Dynamic RAM(3.3V 8Mx8 EDO頁面模式CMOS動態(tài)RAM) |
| 中文描述： | 3.3伏8米× 8 EDO公司頁面模式的CMOS動態(tài)RAM（3.3 8Mx8 EDO公司頁面模式的CMOS動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 7/25頁 |
| 文件大小： | 163K |
| 代理商： | V53C364805A |
7
V53C364805A Rev. 1.2 June 1998
MOSEL V ITELIC
V53C364805A
Write Cycle
32
t
WCH
Write command hold time
5
–
7
–
10
–
ns
33
t
WP
Write command pulse width
5
–
7
–
10
–
ns
34
t
WCS
Write command setup time
0
–
0
–
0
–
ns
15
35
t
RWL
Write command to RAS lead time
6
–
8
–
10
–
ns
36
t
CWL
Write command to CAS lead time
6
–
8
–
10
–
ns
37
t
DS
Data setup time
0
–
0
–
0
–
ns
16
38
t
DH
Data hold time
5
–
7
–
10
–
ns
16
Read-modify-Write Cycle
39
t
RWC
Read-write cycle time
89
–
109
–
128
–
ns
40
t
RWD
RAS to WE delay time
52
–
65
–
77
–
ns
15
41
t
CWD
CAS to WE delay time
22
–
28
–
32
–
ns
15
42
t
AWD
Column address to WE delay time
32
–
40
–
47
–
ns
15
43
t
OEH
OE command hold time
5
–
7
–
10
–
ns
EDO Page Mode Cycle
44
t
HPC
EDO Page Mode cycle time
16
–
20
–
24
–
ns
45
t
CPA
Access time from CAS precharge
–
22
–
28
–
34
ns
7
46
t
RAS
RAS pulse width in EDO page mode
40
200k
50
200k
60
200k
ns
47
t
RHPC
CAS precharge to RAS Delay
25
–
30
–
35
–
ns
48
t
COH
Output Data Hold Time
5
—
5
—
5
—
ns
49
t
OEP
OE Pulse Width
5
—
5
—
5
—
ns
50
t
OEHC
OE Hold Time from CAS High
5
—
5
—
5
—
ns
51
t
WEZ
Output Buffer Turn-off Delay from WE
0
10
0
13
0
15
ns
EDO Page Mode Read-Modify-Write Cycle
52
t
PRWC
EDO page mode read-write cycle time
42
–
53
–
63
–
ns
53
t
CPWD
CAS precharge to WE
32
–
41
–
49
–
ns
CAS before RAS Refresh Cycle
54
t
CSR
CAS setup time
5
–
5
–
5
–
ns
55
t
CHR
CAS hold time
5
–
5
–
10
–
ns
56
t
RPC
RAS to CAS precharge time
0
–
0
–
0
–
ns
57
t
WRP
Write to RAS precharge time
5
–
5
–
10
–
ns
58
t
WRH
Write hold time referenced to RAS
5
–
5
–
10
–
ns
AC Characteristics
(6,7,8)
(Continued)
T
A
= 0 to 70 C,V
CC
= 3.3 V
±
0.3V
#
Symbol
Parameter
-40
- 50
- 60
Unit
Note
Min.
Max.
Min.
Max.
Min.
Max.
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