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參數(shù)資料
| 型號： | V53C516405A60 |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM |
| 中文描述： | 4米× 4 EDO公司頁面模式的CMOS動態(tài)隨機存儲器 |
| 文件頁數(shù)： | 22/24頁 |
| 文件大?。?/td> | 170K |
| 代理商： | V53C516405A60 |
22
V53C516405A Rev. 1.1 March 1998
MOSEL V ITELIC
V53C516405A
Test Mode
As the V53C516405A is organized internally as
1M x 16-bits, a test mode cycle using 4:1 compres-
sion can be used to improve test time. Note that in
the 4M x 4 version the test time is reduced by 1/4 for
a N test pattern.
In a test mode “write” the data from each I/O pin is
written into four 1M blocks simultaneously (all “1” s
or all “0” s). In test mode “read” each I/O output is
used for indicating the test mode result. If the inter-
nal four bits are equal, the I/O would indicate a “1”.
If they were not equal, the I/O would indicate a “0”.
The WCBR cycle (WE, CAS before RAS) puts the
device into test mode. To exit from test mode, a
“CAS before RAS refresh”, “RAS only refresh” or
“Hidden refresh” can be used.Refresh during test
mode operation can be performed by normal read
cycles or by WCBR refresh cycles.
Row addresses A0 through A9 have to kept high
to perform a testmode entry cycle. All other address-
es are don’t care.
Block Diagram in Test Mode
Normal
Test
Vcc
Vss
I/O 3
Normal
Test
Vcc
Vss
I/O 2
Normal
Test
Vcc
Vss
I/O 1
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
1 M Block
I/O 4
I/O 3
I/O 2
I/O 1
Normal
Test
Normal
Normal
Normal
Test
Test
Test
A0C,A1C
A0C,A1C
A0C,A1C
A0C,A1C
A0C,A1C
A0C,A1C
A0C,A1C
A0C,A1C
Normal
Test
Vcc
Vss
I/O 4
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| V53C516405AK50 | DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| V53C516405AK60 | DRAM|EDO|4MX4|CMOS|SOJ|26PIN|PLASTIC |
| V53C516405AT50 | DRAM|EDO|4MX4|CMOS|TSOP|26PIN|PLASTIC |
| V53C516405AT60 | DRAM|EDO|4MX4|CMOS|TSOP|26PIN|PLASTIC |
| V53C516405A | 4M x 4 EDO Page Mode CMOS Dynamic RAM(4Mx4EDO頁面模式CMOS動態(tài)RAM) |
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